Junxian (Jason) Fu

Department of Electrical Engineering

Molecular Beam Epitaxy (MBE): III-V (GaAs and InP based systems) material growth, pseudomorphic and metamorphic growth
Optoelectronics: III-V p-i-n photodetetctor, InP/InGaAs heterojunction bipolar phototransistor, InGaAs metal-semiconductor-metal photodetector, Si/SiGe electro-absorption modulator
Micro-Electronic-Mechanical-Systems (MEMS): GaAs-based MEMS tunable filter, MEMS standing-wave Fourier transform interferometer
Nanotechnology: self-assembly quantum dots and wires structure

Fu, Jun-Xian, Xiaojun Yu, Yu-Hsuan Kuo, James S. Harris, "Near-Infrared Photodetection With Molecular Beam Epitaxy Grown Extended InGaAs", MRS Proceeding Volume 883, Advanced Devices and Materials for Laser Remote Sensing, FF 6.2, 2005
Fu, Jun-Xian, Harris, James S. "InP based double hetero-junction phototransistor with graded emitter-base and base-collector junctions", Proceedings of SPIE Volume: 5726 Semiconductor Photodetectors II Editor(s): Marshall J. Cohen, Eustace L. Dereniak, 19-26, 2005
Fu, Jun-Xian; Bank, Seth R.; Wistey, Mark A.; Yuen, Homan B.; Harris, James S. “Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 mm”, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures); May 2004; vol.22, no.3, p.1463-7
Chen, Ray, Fu, Jun-Xian, Miller, David A. B., Harris, James S. "Spectral Shaping of Electrically Controlled MSM-Based Discrete Tunable Photodetectors," To be published in IEEE Photonics Technology Letters in October 2005
Lin, Chien-chung, Fu, Jun-Xian, Harris, James S. "Widely tunable Al{sub 2}O{sub 3}-GaAs DBR filters with variable tuning characteristics", IEEE Journal on Selected Topics in Quantum Electronics; May/June 2004; v.10, no.3, p.614-621

Selected Presentations

Jun-Xian Fu, Xiaojun Yu, Yu-Hsuan Kuo, James S. Harris, Jr. "Metamorphic Growth of Wavelength-Extended InGaAs on InP with Cycling In-Situ Annealed Step-Graded InAlAs and InGaAs Buffers", EMC 2005, Santa Barbara, California, June 22-24, 2005
Jun-Xian Fu, Xiaojun Yu, Yu-Hsuan Kuo, James S Harris, Jr. “Extended InGaAs/InGaAs Quantum Structure for Near Infrared Photodetection beyond 1.9μm”, CLEO/QELS 2005, Baltimore, Maryland May 22 - 27, 2005
Jun-Xian Fu, Xiaojun Yu, Yu-Hsuan Kuo, James S Harris, Jr. “Near-infrared photodetection using Molecular Beam Epitaxy grown extended InGaAs”, MRS 2005, San Francisco, CA Mar. 28 – Apr. 1, 2005
Jun-Xian Fu, James S. Harris, "InP based double hetero-junction phototransistor with graded emitter-base and base-collector junctions", Photonics West 2005, San Jose, California, January 22-27, 2005
Jun-Xian Fu; Bank, SR; Wistey, MA; Yuen, HB; Harris, JS “Near infrared (2.04mm) material: InGaAs(NSb)/InP”, MRS2004 Apr. 12-15, sumposium L: New materials for microphotonics. San Francisco, CA
Jun-Xian Fu, Seth Bank, Mark Wistey, James S. Harris, Jr “Solid-Source Molecular Beam Epitaxy (SSMBE) growth of GaInNAs on InP substrate”, NAMBE 2003, Sept.29, Keystone, CO

Personal Information

Now with Exponent, Inc. (Failure Analysis), Menlo Park, California, 94025
Ph.D. Department of Applied Physics, 2005 Stanford University
M.S. Department of Electrical Engineering 2003 Stanford University
Ph.D. Department of Electrical Engineering 2000 Peking (Beijing) University, China
B.S. Department of Electrical Engineering 1997 Peking (Beijing) University, China
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