Donghun Choi

Professor James S. Harris Group

Solid State Laboratory

Stanford University

Research Interests

I'm a Ph.D candidate in Electrical Engineering at Stanford University. Since the Summer of 2004, I'm working for Professor James S. Harris ( We call him "Coach"). Currently, my research interests are in III-V semiconductors growth on Si substrate using Ge buffer, and surface passivation of III-V materials to realize III-V metal-oxide-semiconductor field effect Transistor (MOSFET).

My research is cosisting of following three

  • Ge growth on Si substrate by CVD
  • III-V growth on Ge/Si virtual substrate by MBE
  • Materials and interface characterization by AFM, XRD, XPS and PL

    • For high-k gate dielectric, I'm focusing on some materials, such as HfO2, LaAlO3, Al2O3 and interface characteristics on III-V using capacitance-voltage (C-V), conductance-voltage(G-V) and current-voltage(I-V) measurements.

    Selected Publications:

    1. D. Choi, M. Warusawithana, D.G. Schlom, and J. S. Harris, "Annealing condition optimization and electrical characterization of amorphous LaAlO3 /GaAs metal-oxide-semiconductor capacitors," Applied Physics Letters, June 2007, 90, 243505.[PDF]

    2. D. Choi, M. Warusawithana, C.O. Chui, J. Chen, W. Tsai, D. G. Schlom, and J. S. Harris, "The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects," 2007 Materials Research Society(MRS) Symposium Proceedings, Vol.996 0996-H05-31[PDF]

    3. D. Choi, Y. Ge, J. Cagnon, S. Stemmer and J.S. Harris," Low surface roughness and threading dislocation Ge growth on Si(001) substrate," J. Crystal Growth (submitted)

    4. D. Choi, E. Kim, P.C. McIntyre and J.S. Harris, "Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication," Applied Physices Letters (accepted)

    5. N. Goel, P. Majhi, C. O. Chui, W. Tsai, D. Choi and J. S. Harris, "InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition," Applied Physics Letters, October 2006, 89, 163517.

    Selected Presentations:

    1. D. Choi, M. Warusawithana, C.O. Chui, J. Chen, W. Tsai, D. G. Schlom, and J. S. Harris, "The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects," 2007 Materials Research Society (MRS) Spring, Symposium H

    2. D. Choi, M. Warusawithana, D.G. Schlom, and J. S. Harris, "Electrical characterization of Molecular Beam Deposited LaAlO3 - GaAs and Annealing Effects," 49th Electronic Material$ Conference (EMC), Notre Dame, IN, June 2007.

    3. E. Kim, P. Chen, D. Choi, J. S. Harris, Y. Nishi, K. Saraswat and P. Mcintyre, "Atomic Layer Deposition of HfO2 on IIIV Semiconductors:Effects of Surface Treatment and Post-Deposition Anneals," 49th Electronic Materials Conference (EMC), Notre Dame, IN, June 2007.

    4. D. Choi, J, Cagnon, S. Stemmerand J. S. Harris, "Low surface roughness and threading dislocation density Ge growth on Si," 50th Electronic Material Conference (EMC), Santa Barbara, CA, June 2008.(accepted)

    5. D. Choi, E. Kim, P.C. McIntyre and J. S. Harris, "III-V Metal-Oxide-Semiconductor Capacitor Fabrication on Ge/Si," TECHCON 2008 , Austin, TX, Sep. 2008.(accepted)

    Other Presentations:

    1. D. Choi and J. S. Harris, "III-V & Ge Insulated Gate FETs (IGFET) on Si," SRC Nonclassical CMOS Research Center Kick-off Meeting, August 2006

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