PUBLICATIONS

J. S. Harris, Jr.

    Publications: 1985 1986 1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 2002

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  1. E. S. Hellman, J. S. Harris, Jr., C. B. Hanna and R. B. Laughlin, "One Dimensional Polaron Effects and Current Inhomogeneities in Sequential Phonon Emission," Physica 134B 41-46, 1985.

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  2. E. S. Hellman, P. M. Pitner, A. Harwit, D. Liu, G. W. Yoffe, J. S. Harris, Jr., B. Caffee and T. Hierl, "Molecular Beam Epitaxy of Gallium Arsenide using Direct Radiative Substrate Heating," J. Vac. Sci. Technol. B4 (2) 574-7 Mar/Apr 1986.

  3. R. L. Lee, W. J. Schaffer, Y. G. Chai, D. Liu and J. S. Harris, Jr., "Material Effects on the Cracking Efficiency of Molecular Beam Epitaxy Arsenic Cracking Furnaces," J. Vac. Sci. Technol. B4 (2) 568-70, Mar/Apr 1986.

  4. S. M. Koch, S. J. Rosner, D. G. Schlom and J. S. Harris, Jr., "The Growth of GaAs on Si by Molecular Beam Epitaxy," Proc. of the Annual Spring Meeting of the Materials Research Society, Palo Alto, CA, April 1986. Heteroepitaxy on Silicon, ed. by J. C. C. Fan and J. M. Poate, p. 37.

  5. S. J. Rosner, S. M. Koch, S. Laderman and J. S. Harris, Jr., "Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates," Proc. of the Annual Spring Meeting of the Materials Research Society, Palo Alto, CA, April 1986, Heteroepitaxy on Silicon, ed. by J. C. C. Fan and J. M. Poate, p. 77.

  6. Y. C. Pao, D. Liu, W. S. Lee and J. S. Harris, Jr., "Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers," Appl. Phys. Lett. 48 (19) 1291-3, 12 May 1986.

  7. E. S. Hellman and J. S. Harris, Jr., "Energy-Momentum Relation for Polarons Confined to One Dimension," Physical Review B 33 (12) 8284-90, 15 June 1986.

  8. E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, Jr., M. H. Kim and G. E. Stillman, "Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 49 (7) 391-3, 18 Aug. 1986.

  9. K. Yoh and J. S. Harris, Jr., "A p-Channel Double Heterojunction GaAs/AlGaAs Modulation Doped Field Effect Transistor," Extended Abstracts of 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, Japan, Aug. 1986, p. 773.

  10. A. Harwit, J. S. Harris, Jr. and A. Kapitulnik, "Calculated Quasi-Eigenenstates and Quasi-Eigenenergies of Quantum Well Superlattices in an Applied Field," J. Appl. Phys. 60 (9) 3211-13, 1 Nov. 1986.

  11. E. S. Hellman and J. S. Harris, Jr., "Polaron Transport in Quasi-One-Dimensional Semiconductor Heterostructures," Surface Science, 174 pp. 459-465, 1986.

  12. R. Hull, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Atomic Structure of the GaAs/Si Interface," Appl. Phys. Lett. 49 (25) 1714-16, 22 Dec. 1986.

  13. S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Nucleation and Initial Growth of GaAs on Si Substrate," Appl. Phys. Lett. 49 (26) 1764-66, 29 Dec. 1986.

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  14. E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, Jr., M. H. Kim and G. E. Stillman, "GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy," J. of Cryst. Growth 81 344-348, 1987.

  15. E. S. Hellman and J. S. Harris, Jr., "Polynomial Kinetic Energy Approximation for Direct-Indirect Heterostructures," Superlattice and Microstructures, 3 167-169, 1987.

  16. S. M. Koch, S. J. Rosner, R. Hull, G. W. Yoffe and J. S. Harris, Jr., "The Growth of GaAs on Si by MBE," J. of Cryst. Growth 81 205-213, 1987.

  17. E. S. Hellman and J. S. Harris, Jr, "Infra-Red Transmission Spectroscopy of GaAs during Molecular Beam Epitaxy," J. Cryst. Growth, 81, pp. 38-42, 1987.

  18. A. Harwit and J. S. Harris, Jr., "Observation of Stark Shifts in Quantum Well Intersubband Transitions," Appl. Phys. Lett. 50 (11) 16 March 1987.

  19. K. Yoh and J. S. Harris, Jr., "A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor," Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo, March 1987, p. 804.83.

  20. R. Hull, A. Fischer-Colbrie, S. M. Koch, and J. S. Harris, Jr., "Nucleation of GaAs on Vicinal Si(100) Surfaces", Mat. Res. Soc. Symp. Proc. 94, 25, 1987.

  21. S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates," Proc. of the Spring 1987 MRS Meeting, Anaheim, CA.

  22. K. Nauka, G. A. Reid, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Deep Electron Traps in MBE GaAs on Si," Proc. of the Spring 1987 MRS Meeting, Anaheim, CA.

  23. J. S. Harris, Jr., S. M. Koch and S. J. Rosner, "The Nucleation and Growth of GaAs on Si," Proc. of the Spring 1987 MRS Meeting, Anaheim, CA.

  24. E. Wolak, A. Harwit and J. S. Harris, Jr., "Comment on Observation of a Negative Differential Resistance due to Tunneling through a Single Barrier into a Quantum Well," Appl. Phys. Lett. 50 (22) 1 June 1987.

  25. D. R. Allee, P. R. de la Houssaye, D. G. Schlom, B. W. Langley, J. S. Harris Jr., and R. F. W. Pease, "Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography," Proc. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Aug. 10-12, 1987, Ithica, New York, pp. 190-198.

  26. J. S. Johannessen, J. S. Harris, Jr., D. B. Rensch, H. V. Winston, A. T. Hunter, C. Kocot and A. Bivas "The Influence of Substrates on Implanted Layer Characteristics", Proc. of the 14th International Symposium on GaAs and Related Compounds, Sep. 1987, Crete, Greece. pp. 113-116.

  27. C. Webb, S.-L. Weng, J. N., Eckstein, N. Missert, K. Char, D. G. Schlom, E. S. Hellman, M. R. Beasley, A. Kapitulnik and J. S. Harris, Jr., "Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques," Appl. Phys. Lett., 51 (15) 1191, 12 Oct. 1987.

  28. J. Hwang, P. Pianetta, C. K. Shih, W. E. Spicer, Y.-C. Pao and J. S. Harris, Jr., "Determination of the Natural Valence-Band Offset in InxGa1-xAs System," Appl. Phys. Lett., 51 (20) 1632, 16 Nov. 1987.

  29. G. W. Yoffe, D. G. Schlom and J. S. Harris, Jr., "Modulation of Light by Electrically Tunable Multi-Layer Interference Filter," Appl. Phys. Lett. 51 (23), 1876-1878, 7 Dec. 1987.

  30. K. Yoh and J. S. Harris, Jr., "Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET," by MBE, IEDM Washington, DC, Dec. 1987, pp. 892.

  31. R. Hull, J. C. Bean, R. Leibenguth, S. M. Koch and J. S. Harris, Jr., "Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si", extended Abstracts of Electrochemized, Materials Research Society Meeting, Honolulu, Hawaii, Dec, 1987, pp. 293-300.

  32. Y. C. Pao, N. Gabrial, D. Liu, J. S. Harris, Jr., L. Parechanian and E. R. Webber, "Device and Material Characterization of Molecular-Beam Epitaxial (110) GaAa/AlGaAs," J. Electron. Mat. 16 (4), pp. A16, 1987.

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  33. E. S. Hellman and J. S. Harris, Jr., "Hot Electron Transport Parallel to Strong Magnetic Fields in Gallium Arsenide," Solid State Electronics, 31, (3/4), pp. 785-788, 1988.

  34. J. Hwang, C. K. Shih, P. Pianetta, G. D. Kubiak, R. H. Stulen, L. R. Dawson, Y. C. Pao and J. S. Harris, Jr., "Effect of Strain on the Band Structure of GaAs and In0.2Ga0.8As", Appl. Phys. Lett. 52 (4), pp. 308-310, 25 Jan. 1988.

  35. S. Y. Chou, E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "A Lateral Resonant Tunneling FET," Journal of Superlattices and Microstructures, 4 (2) 1988.

  36. D. R. Allee, P. R. de la Houssaye, D. G. Schlom, J. S. Harris, Jr. and R. F. W. Pease, "Sub-100 nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography," Proc. 31st International Symposium on Electron, Ion, and Photon Beams, Journal of Vacuum Science and Technology B, 6 (1), pp. 328-332, Jan./Feb. 1988.

  37. S. Y. Chou, E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "Resonant Tunneling of Electrons of 1 or 2-Degrees of Freedom," Appl. Phys. Lett. 52 (8) 657-659, 22, 2/88.

  38. P. R. de la Houssaye, D. R. Allee, Y. C. Pao, D. G. Schlom, J. S. Harris, Jr., and R. F. W. Pease, "Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Å," IEEE Elect. Dev. Lett., 9 (3), pp. 148-150, March 1988.

  39. Y. C. Pao, W. Ou, J. S. Harris, Jr., "(110)-Oriented GaAs MESFETs", IEEE Elect. Dev. Lett. 9, (3), March 1988.

  40. E. S. Hellman, D. G. Schlom, N. Missert, K. Char, J. S. Harris, Jr., M. R. Beasley, A. Kapitulnik, T. H. Geballe, J. N. Eckstein, S. L. Weng and C. Webb, "Molecular Beam Epitaxy and Deposition of High Tc Superconductors," J. Vac. Sci. Technol. B, 6 (2), pp. 799-803, Mar/Apr. 1988.

  41. J. W. Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, Jr., S. J. Rosner, G. A. Reid and K. Nauka, "Processing and Characterization of GaAs Grown into Recessed Silicon," J. Vac. Sci. Technol. B, 6 (2), pp. 717-719, Mar/Apr 1988.

  42. M. J. Lin, E. C. Larkins, Y. C. Pao, D. Liu, G. Yoffe, E. Wolak, T. Ma and J. S. Harris, Jr., "Characterization of Al0.25Ga0.75As Grown by Molecular Beam Epitaxy," J. Vac. Sci. Technol. B, 6 (2), pp. 631-635, Mar/Apr 1988.

  43. R. Hull, S. M. Koch, and J. S. Harris, Jr., "Substrate Surface Structure and Nucleation Phenomena in Epitaxial Growth of GaAs on Vicinal Si(100) Substrates", Mat. Res. Soc. Symp. Proc. 116, 111, 1988.

  44. E. C. Larkins, Y. C. Pao, D. Liu, J. Lin, G. Yoffe and J. S. Harris, Jr., "Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by Molecular Beam Epitaxy," J. Vac. Sci. Technol. B, 6 (2), pp. 636-637, Mar/Apr 1988.

  45. G. W. Yoffe, D. G. Schlom and J. S. Harris, Jr., "Summary Abstract: MBE Growth of Tunable Multi-Layer Interference Optical Modulators," J. Vac. Sci. Technol. B. 6 (2), 688, Mar/Apr 1988.

  46. D. G. Schlom, J. N. Eckstein, E. S. Hellman, C. Webb, F. Turner, J. S. Harris, Jr., M. R. Beasley and T. H. Geballe, "Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds", Materials Research Society, Reno, NV, April 1988, MRS Proc., pp. 197-200, 1988.

  47. J. W. Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, Jr., S. J. Rosner, K. Nauka and G. A. Reid, "Growth of GaAs on Si in Masked, Etched Trenches", Proc. of Spring MRS Meeting, Reno, NV, 4/88, 116, Heteroepitaxy on Silicon: Fundamentals, Structures and Devices, ed. H. K. Choi, R. Hull, H. Ishiwars and R. J. Nemanich.

  48. S. Y. Chou and J. S. Harris, Jr., "Room-Temperature Observation of Resonant Tunneling Through a AlGaAs/GaAs Quasi-Parabolic Quantum Well Grown by MBE," Appl. Phys. Lett. 52 (17), pp. 1422-1424, 25 April 1988.

  49. S. M. Koch, R. Hull, S. J. Rosner, and J. S. Harris, Jr., "GaAs/Si Nucleation and Buffer Layer Growth", Mat. Res. Soc. Symp. Proc. 116, 111, 1988.

  50. S. Y. Chou, J. S. Harris, Jr. and R. F. W. Pease, "A Lateral Resonant Tunneling Field-Effect Transistor," Appl. Phys. Lett. 52 (23), pp. 1982-1984, 6 June 1988.

  51. R. Hull, J. C. Bean, N. Chand, R. E. Leibenguth, D. Bahnck, S. M. Koch and J. S. Harris, Jr., "Heteronucleation onto Si Surfaces", Mat. Res. Soc. Symp. Proc. 102, 1988.

  52. E. Wolak, K. L. Lear, P. M. Pitner, E. S. Hellman, G. B. Park, T. Weil and J. S. Harris, Jr., "Elastic Scattering Centers in Resonant Tunneling Diodes", Appl. Phys. Lett. 53 (3), pp. 201-203, 18 July 1988.

  53. E. Wolak, K. L. Lear, P. M. Pitner, G. B. Park, E. S. Hellman, T. Weil and J. S. Harris, Jr., "The Effect of Elastic Scattering Centers on the Current Voltage Characteristics of Double Barrier Resonant Tunneling Diodes", Proc. of SPIE 43, 1988.

  54. S. Munnix, D. Bimberg, D. E. Mars, J. N. Miller, E. C. Larkins and J. S. Harris, Jr., "High Carrier Densities in GaAs/AlGaAs Modulation n-Doped Quantum Wells: From One- to Two-Component Plasma," Proc. of 19th ICPS, Warsaw, pp. 15-19, Sept. 1988.

  55. D. Liu, T. Zhang, R. A. LaRue, J. S. Harris, Jr. and T. W. Sigmon, "Deep Level Transient Spectroscopy Study of GaAs Surface States Treated With Inorganic Sulfides," Appl. Phys. Lett. 53 (12), pp. 1059-1061, 19 Sept. 1988.

  56. E. S. Hellman, K. L. Lear and J. S. Harris, Jr., "Limit Cycle Oscillations in Negative Differential Resistance Devices", J. Appl. Phys. 64 (5) pp. 2798-2800, 1, Sept. 1988.

  57. K. L. Lear, K. Yoh and J. S. Harris, Jr., "Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates," Proc. of 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (9), pp. 593-604, Atlanta, GA, Sept. 1988.

  58. B. Lee, M. H. Kim, S. S. Bose, G. E. Stillman, E. C. Larkins, E. S. Hellman, D. G. Schlom and J. S. Harris, Jr., "Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy," Proc. of 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (2), pp. 23-28, Atlanta, GA, Sept. 1988.

  59. R. Köhrbrück, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr., "Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells," Proc. of 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (2), pp. 65-68, Atlanta, GA, Sept. 1988.

  60. E. C. Larkins, D. Liu, Y. C. Pao, M. J. Lin, G. W. Yoffe and J. S. Harris, Jr., "Characterization of AlGaAs and GaAs Materials and Interfaces Grown on Misoriented (110) GaAs by MBE," Proc. of 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (2), pp. 23-28, Atlanta, GA, 9/88.

  61. D. Liu, E. C. Larkins, T. Zhang, T. T. Chiang, R. A. LaRue, T. Sigmon, W. E. Spicer and J. S. Harris, Jr., "Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces," Proc. of 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (6), pp. 371-374, Atlanta, GA, Sept. 1988.

  62. D. G. Schlom, J. N. Eckstein, E. S. Hellman, S. K. Streiffer, J. S. Harris, Jr., M. R. Beasley, J. C. Bravman, T. H. Geballe, C. Webb, K. von Dessonneck and F. Turner, "Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds," Appl. Phys. Lett. 53 (17), pp. 1660-1662, Oct. 1988.

  63. T. Ma, D. Ueda, W.-S. Lee, J. Adkisson, J. S. Harris Jr. "Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates," IEEE Elect. Dev. Lett., 9 (12) 657-659, Dec. 1988.

  64. G. A. Reid, K. Nauka, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Spatial Inhomogeneities of the Luminescence and Electrical Properties of MBE Grown GaAs on Si", Proc. Mat. Res. Soc. Symp., 116, 1988.

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  65. S. K. Diamond, E. Özbay, M. J. W. Rodwell, D. M. Bloom, Y.C. Pao and J. S. Harris, "Resonant Tunneling Diodes for Switching Applications," Appl. Phys. Lett, 54 (2), pp, 153-155, Jan. 1989.

  66. M. M. Fejer, S. J. B. Yoo, R. L. Byer, A. Harwit and J. S. Harris, Jr., "Observation of Extremely Large Quadratic Susceptibility at 9.6 - 10.8um in Electric-field-biased AlGaAs Quantum Wells," Phys. Rev. Lett., 62, pp. 1041-1044 (1), 27, Feb. 1989.

  67. R. Köhrbröck, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr., "Influence of the As:Ga Flux Ratio on Growth Rate, Interface Quality, and Impurity Incorporation in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 54 (7), pp. 623-625, 13 Feb. 1989.

  68. S. Munnix, D. Bimberg, D. E. Mars, J. N. Miller, E. C. Larkins, and J. S. Harris Jr., "Many-body Effects in the Luminescence Spectra of GaAs/AlGaAs Modulation Doped Heterostructures," ACTA Physica Polonica, A75, pp. 33-37, 1989.

  69. S. K. Diamond, E. Özbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao, E. Wolak and J. S. Harris, "Fabrication of Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications," IEEE Elect. Dev. Lett., 10, pp. 104-106, March 1989.

  70. E. Wolak, K. Shepard, S. Y. Chou and J. S. Harris, Jr., "Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom," J. of Superlattices and Microstructures, 5, (2), pp. 251-253, 1989

  71. D. G. Schlom, W. S. Lee, T. Ma and J. S. Harris, Jr., "Reduction of Gallium-Related Oval Defects," J. Vac. Sci. & Technol. B7, (2), pp. 296-298, Mar/Apr 1989.

  72. J. N. Eckstein, D. G. Schlom, E. S. Hellman, K. E. von Dessonneck, Z. J. Chen, C. Webb, F. Turner, J. S. Harris, Jr., M. R. Beasley and T. H. Geballe, "Epitaxial Growth of High Temperature Superconducting Thin Films," J. Vac. Sci. & Technol. B7, (2), pp. 319-323, Mar/Apr 1989.

  73. W. S. Lee, D. Ueda, T. Ma, Y. C. Pao, J. S. Harris, Jr., "Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Elect. Dev. Lett. 10, pp. 200-202, May 1989.

  74. G. N. Nasserbakht, J. W. Adkisson, T. I. Kamins, B. A. Wooley, and J. S. Harris, Jr., "Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology", Proc. of VLSI Circuits Dig. Tech. Symposium, pp. 83, May 1989.

  75. E. S. Hellman, D. G. Schlom, A. F. Marshall, S. K. Streiffer, J. S. Harris, Jr., M. R. Beasley, J. C. Bravman, T. H. Geballe, J. N. Eckstein and C. Webb, "Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy," J. Mater. Res., 4, (3), pp. 476-495, May/Jun 1989.

  76. J. S. Harris, Jr., J. N. Eckstein, E. S. Hellman and D. G. Schlom, "MBE Growth of High Critical Temperature Superconductors," J. of Crystal Growth 95, pp. 607-616, 1989.

  77. J. M. Owens and D. J. Halchin, K. L. Lear, W. S. Lee and J. S. Harris Jr., "Microwave Characteristics of MBE Grown Resonant Tunneling Devices", Proc. of IEEE/MTT-S International Microwave Symposium, June 1989, Long Beach, CA

  78. D. G. Hill, W. S. Lee, T. Ma and J. S. Harris, Jr., "AlGaAs/InGaAs Strained-Base PnP Heterojunction Bipolar Transistors," Elec. Lett., 25, pp. 993-995, 1989.

  79. Y. C. Pao, D. Liu and J. S. Harris, Jr., "Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen" Journal of Crystal Growth, 95, pp. 305-308, 1989.

  80. Y. C. Pao, and J. Franklin and J. S. Harris, Jr., "Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy" J. of Crystal Growth, 95, pp. 301-304, 1989.

  81. P. Cheng, B. G. Park, S. D. Kim and J. S. Harris, Jr., "The X-Valley Transport in GaAs/AlAs Triple Barrier Structures" J. Appl. Phys. 65, (12), pp. 5199-5201, June 1989.

  82. J. N. Eckstein, J. S. Harris, Jr., D. G. Schlom, I. Bozovic, K. E. von Dessoneck and Z. J. Chen, "Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds," Proc. International Superconductivity Electronics Conference, pp. 14-19, Tokyo, Japan, June 1989.

  83. S. Munnix, R. K. Bauer, D. Bimberg, J. S. Harris Jr., R. Köhrbrück, E. C. Larkins, Ch. Maierhofer, D. E. Mars and J. N. Miller, "Growth Kinetics, Impurity Incorporation, Defect Generation, and Interface Quality of MBE-grown AlGaAs/GaAs Quantum Wells: Role of group III and group V Fluxes," J. Vac. Sci. Technol., B7, (4) pp. 704-709, Jul/Aug 1989.

  84. P. Cheng and J. S. Harris, Jr., "The Effect of Si Doping in AlAs Barrier Layers of AlAs-GaAs-AlAs Double Barrier Resonant Tunneling Diodes," Appl. Phys. Lett. 55, (6), pp. 572-574, Aug. 1989.

  85. D. Ueda, W. S. Lee, T. Ma, D. Costa, and J. S. Harris Jr., "GaAs/AlGaAs Power HBT on Silicon Substrate," Elec. Lett., 25, (19), pp. 1968-1269, Sept. 1989.

  86. S. Y. Chou, D. R. Allee, R. F. W. Pease and J. S. Harris, Jr., "New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography", Proc. of 16th International Symposium on GaAs and Related Compounds, pp. 875-879, Karuizawa, Japan, Sept. 1989.

  87. E. Wolak, B. G. Park, K. L. Lear and J. S. Harris, Jr., "Variation of the Spacer Layer Between Two Resonant Tunneling Diodes," Appl. Phys. Ltrs, 55, pp. 1871-1873, Oct. 1989.

  88. T. Ma, W. S. Lee, J. Adkisson and J. S. Harris, "Effect of Bulk Recombination Current on the Current Gain of GaAs/AIGaAs Heterojunction Bipolar Transistors in GaAs-on-Si," IEEE Elect. Dev. Lett., 10, 10, pp. 458-460, Oct. 1989.

  89. D. G. Schlom, J. N. Eckstein, I. Bozovic, A. F. Marshall, J. T. Sizemore, Z. J. Chen, K. E. Von Dessonneck, J. S. Harris, Jr. and J. C. Bravman, "Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds" Proc. Material Research Society Symposium M: High-Temperature Superconductors, 169, pp. 711-714, Nov. 1989.

  90. B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, Jr., "Improved Vertically Integrated Resonant Tunneling Diodes," Proc. IEEE/IEDM Symposium, Washington, D. C. pp. 563-566, Dec. 1989.

  91. S. K. Diamond, E. Özbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao, E. Wolak, and J. S. Harris, Jr., "Resonant Tunneling Diodes for Switching Applications", OSA Proc. on Picosecond Electronics and Optoelectronics (Optical Society of American, Washington, D.C., 1989,) 4, pp. 101-105.

  92. D. E. Munnix, D. Bimberg, D. E. Mars, J. N. Miller, E. C. Larkins, and J. S. Harris, Jr. "Optical Properties of One- and Two-Component Plasma in GaAs/AlGaAs n-Modulation Doped Heterostructures," Superlattices and Microstructures, 6, 4, pp. 369-372, 1989.

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  93. D. G. Schlom, A. F. Marshall, J. T. Sizemore, Z. J. Chen, J. N. Eckstein, I. Bozovic, K. E. von Dessonneck J. S. Harris, Jr., and J. C. Bravman "Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds," J. Cryst. Growth. 102, pp. 361-375, Feb. 1990.

  94. P. Cheng and J. S. Harris, Jr., "Improved Design of AlAs/GaAs Resonant Tunneling Diodes", Proc. of Quantum Well and Superlattice Physics III, (1990), SPIE, 1283, pp. 353-358, March 1990.

  95. S. D. Kim, T. Ma, Z. Rek, and J. S. Harris, Jr., "Defect Structures in MBE Grown GaAs on Si," Proc. of Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1990), SPIE, 1285, pp. 202-211, March 1990.

  96. D. G. Schlom, J. N. Eckstein, I. Bozovic, Z. J. Chen, A. F. Marshall, K. E. von Dessonneck, and J. S. Harris, Jr., "Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors," Proc. of Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1990), SPIE, 1285, pp. 234-247, March 1990.

  97. J. H. Kim, I. Bozovic, D. B. Mitzi and A. Kapitulnik and J. S. Harris., Jr., "Optical Anisotropy of Bi2Sr2CaCu208," Phys. Rev. B, 41, 10, pp. 7251-7253, April 1990.

  98. P. Cheng and J. S. Harris, Jr., "Improved Design of AlAs/GaAs Resonant Tunneling Diodes", Appl. Phys. Lett. 56, (17) pp. 1676-1678, April 1990.

  99. J. S. Harris, Jr., "From Bloch Functions to Quantum Wells", International Jrnl. of Modern Physics B, 4, 6, pp. 1149-1179, May 1990.

  100. I. Bozovic, J. N. Eckstein, D. G. Schlom and J. S. Harris, Jr., "In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy", Proc. of Science and Technology of Thin-Film Superconductors II, April/May 1990, Denver, CO.

  101. J. N. Eckstein, I. Bozovic, K. E. von Dessonneck, D. G. Schlom, and J. S. Harris, Jr., "Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures," Proc. from the ISTEC Workshop of Superconductivity, pp. 37-40, Kagoshima, Japan, May 1990.

  102. J. N. Eckstein, I. Bozovic, D. G. Schlom, Z. J. Chen and J. S. Harris, Jr., "In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy", Proc. of the EMC Conference, University of California, Santa Barabara, June 1990.

  103. Y. C. Pao, C. Nishimoto, M.Riaziat, R. Majidi-Ahy, N. G. Bechtel, J. S. Harris, Jr., "Impact of Surface Layer on In0.52Al0.48As/In0.53Ga0.47 As/InP High Electron Mobility Transistors", IEEE Electron Dev. Lttrs, 11, (7), pp. 315-313, July 1990.

  104. W. S. Lee, G. W. Yoffee, D. G. Schlom and J. S. Harris, Jr., "Accurate Measurement of MBE Temperature," Proc. of MBE Conference, UCSD, San Diego, Aug. 1990.

  105. J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr. "Ballistic Electron Contributions inVertically Integrated Resonant Tunneling Diodes", Proc. NATO Advanced Study Institute on Granular Nanoelectronics, Ciocco, Italy, 7/23-8/4, 1990.

  106. J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury and J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr. "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", Proc. 5th Int. Conf. on Superlattices and Microstructures, Berlin, 13-19 Aug. 1990.

  107. W. Liu, D. Costa and J. S. Harris, Jr., "Novel Doubly Self-Aligned AlGaAs/GaAs HBT" Electronics Letters, 26, (17), pp. 1361-1362, Aug. 1990.

  108. J. N. Eckstein, I Bozovic, K. E. von Dessonneck, D. G. Schlom, J. S. Harris, Jr., and S. M. Baumann, "Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi2Sr2Ca2Cu3Ox," Appl. Phys. Lett. 57, pp. 931-933, Aug. 1990.

  109. D. G. Hill, K. L. Lear, and J. S. Harris, Jr. "Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs", Jrnl of the Electrochemical Society 137, (9), pp. 2913-2914, Sept. 1990.

  110. K. Kojima, D. G. Schlom, K. Kuroda, M. Tanioku, K. Hamanaka, J. N. Eckstein and J. S. Harris, Jr., "Superstructure in Thin Films of Bi-Based Compounds on MgO", Japanese Jrnl of Appl. Phys, 9, pp. L1638-L1641, Sept. 1990.

  111. D. Costa, W. Liu, and J. S. Harris, Jr., "A New Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model," Proc. IEEE Bipolar Circuits and Tech. Meeting, 5.6, pp. 118-1121, Sept. 1990.

  112. J. N. Eckstein, I. Bozovic, D. G. Schlom, and J. S. Harris, Jr., "Growth of Untwinned Bi2Sr2Ca2Cu3Ox Thin Films by Atomically Layered Epitaxy," Appl. Phys. Lett. 57, pp. 1049-1051, Sept. 1990.

  113. B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Optimization of Modulation Ratio and Insertion Loss in Reflective Electroabsorption Modulators", Appl. Phys. Lett. 57, (15), pp. 1491-1492, Oct. 1990.

  114. B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Optimization of Reflection Electro-Absorption Modulators", Proc. of Physical Concepts of Materials for Novel Optoelectronics Device Applications II: Device Physics and Applications, (1990), SPIE 1362, pp. 559-563, Oct. 1990.

  115. J. S. Harris, Jr., and M. M. Fejer "Quantum Wells and Artificially Structured Materials for Non-Linear Optics," Proc. of Physical Concepts of Materials for Novel Optoelectronics Device Applications II: Device Physics and Applications, (1990) SPIE 1361, pp. 262-273, Oct. 1990.

  116. Y. C. Pao, C. K. Nishimoto, R. Majidi-Ahy, J. Archer, N. G. Bechtel, J. S. Harris, Jr., "Characterization of Surface-Undoped In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors", IEEE Trans. on Electron Dev., 37, (10), pp. 2165-2170, Oct. 1990.

  117. D. G. Hill, W. S. Lee, T. Ma, and J. S. Harris, Jr., "Uniform, High-Gain AlGaAs/In0.05Ga0.95As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process," IEEE Electron Device Lett. 11, pp. 425-427, 1990.

  118. D. G. Schlom, A. F. Marshall, J. S. Harris, Jr., I. Bozovic, J. N. Eckstein, "Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique", Proc. of the 3rd International Symposium on Superconductivity, Sendai, Japan, Nov. 1990.

  119. B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Large Reflectivity Modulation Using InGaAs-GaAs," IEEE Photonics Technology Lett., 2, pp. 807-809, Nov. 1990.

  120. J. J. L. Rascol, K. P. Martin, R. E. Carnahan R. J. Higgins, L. Cury, J. C. Portal, B.G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr., "Influence of Ballistic Electrons on the Device Characteristics of Vertically Integrated Resonant Tunneling Diodes", Appl. Phys. Lett, 1990.

  121. D. R. Allee, S. Y. Chou, J. S. Harris, Jr., and R. F. W. Pease, "Resonant Tunneling of 1-Dimensional Electrons Across an Array of 3-Dimensionally Confined Potential Wells," Superlattices and Microstructures 7, (2), pp. 131-134, 1990.

  122. B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Wannier-Stark Localization in a Strained InGaAs/GaAs Superlattice", Appl. Phys. Lett. 57, (20), pp. 2116-2117, Nov. 12, 1990.

  123. J. W. Adkisson, J. S. Harris, T. George, and E. R. Weber, "77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers," Proc. from Electronic, Optical and Device Properties of Layered Structures, MRS Meeting, pp. 229-323, Nov. 1990.

  124. W. Liu, D. G. Hill, and J. S. Harris, Jr., "A High Frequency Pnp AlGaAs/InGaAs Heterojunction Bipolar Transistor with an Ultrathin Strained Base", Elect. Letts., 26, pp. 2000-2002, Nov. 1990.

  125. W. Liu, D. Hill, D. Costa, J. S. Harris, Jr., "Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field, Proc. IEEE/IEDM, pp. 669-672, San Francisco, CA, Dec. 1990.

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  126. Y.C. Pao, and J. S. Harris, Jr., "Molecular Beam Epitaxial Growth and Structural Design In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs", Jrnl Crysl. Gwth., 111, pp. 489-494, 1991.

  127. J. H. Kim, I. Bozovic, J. S. Harris, Jr., W. Y. Lee, C. B. Eom, and T. H. Geballe, "Plasmons in High -Tc Cuprate Superconductors," Proc. of the University of Miami Workshop on Electronic Structure and Mechanisms for High Temperature Superconductivity, pp. 251-254. (Jan. 3-9, 1991), edited by J. Ashkenazy and G. Vezzol, Plenum Press.

  128. I. Bozovic, J. H. Kim, J. S. Harris, Jr., and W. Y. Lee, "Optical Study of Plasmons in Tl2Ba2Ca2Cu3O10," Physical Review B, 43, pp. 1169-1172, 1 Jan. 1991.

  129. T. B. Boykin, Jan P. A. van der Wagt, and J. S. Harris, Jr., "A Tight Binding Model for GaAs/AlAs Resonant Tunnel Diodes," Physical Review B, 43, pp.4777-4784, 15 Feb. 1991.

  130. B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Novel Cavity Design for High Reflectivity Changes in a Normally Off Electroabsorption Modulator," Appl. Phys. Lett. 58, pp. 813-815, Feb. 1991.

  131. W. Liu, D. Costa, and J. S. Harris, Jr., "Theoretical Comparison of Base Bulk Recombination Current and Surface Recombination Current of a MESA AlGaAs/GaAs Heterojunction Bipolar Transistor", Solid State Electronics, 34, pg. 1119-1123, 1991.

  132. W. S. Lee, G. W. Yoffee, D. G. Schlom and J. S. Harris, Jr., "Accurate Measurement of MBE Temperature," J. Crystal Growth 111, pp. 131, 1991.

  133. B. Pezeshki, R. Apte, S. M. Lord, and J. S. Harris, Jr., "Dynamic Optical Grating for Laser Beam Steering Applications", OSA Proc. on Photonic Switching, Salt Lake City, UT, March 1991.

  134. D. Thomas, B. Pezeshki, and J. S. Harris, Jr., "Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration", Proc. from Quantum Optoelectronics, pp. 30-33, Salt Lake City, UT, March 1991.

  135. W. S. Fu, G. E. Poirier, R. P. Bryan, J. F. Klem, G. R. Olbright, A. Paul, R. Binder, S. W. Koch and J. S. Harris, "Femtosecond Gain Dynamics in Semiconductors", Proc. from Quantum Optoelectronics 1991, pp. 3345-3350, Salt Lake City, UT, March 1991.

  136. E. Wolak, E. Ozbay, B. G. Park, S. K. Diamond, D. M. Bloom and J. S. Harris, Jr., "The Design of GaAs Resonant Tunneling Diodes with Peak Current Densities over 2x105 a cm-2", Jrnl. Appl Phys., 69, pp. 3345-3350 March 1991.

  137. S. J. B. Yoo, M. M. Fejer, R. L. Byer, and J. S. Harris, Jr., "Second-Order Susceptibility in Asymmetric Quantum Wells and its Control by Proton Bombardment", Appl. Phys. Lett. 58, pp. 1724-1726, April 1991.

  138. W. S. Lee, G. W. Yoffee, D. G. Schlom and J. S. Harris, Jr., "Accurate Measurement of MBE Substrate Temperature", Jrnl Crys. Grwth, 111, pg 131-135, 1991.

  139. Y. C. Pao and J. S. Harris, Jr., "Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs", Proc. from the Third International Conference, Indium Phosphide and Related Materials, pp. 344-348, April 1991.

  140. J. H. Kim, A. Kapitulnik, J. S. Harris, Jr., K. Char, I. Bozovic, W. Y. Lee, "Preparation of Optically Smooth Surfaces of High-Tc Superconducting Films," Proc. from Spring MRS Meeting, Anaheim, pp. 159-163 April/May 1991.

  141. G. R. Olbright, W. S. Fu, G. E. Poirer, R. P. Bryan, J. F. Klem, A. Paol R.Binder, S. W. Koch and J. S. Harris, Jr., "Femtosecond-gain Spectroscopy of GaAs", Proc. from Quantum Electronics Laser Science 1991, Baltimore, May 1991.

  142. J. H. Kim, K. Char, I. Bozovic, W. Y. Lee, A. Kapitulnik and J. S. Harris, Jr., "Enhancement of Optical Reflectivity of High-Tc Superconducting Films by Ion Milling", Appl. Phys. Letts., 58 pp. 2558-2560, June 1991.

  143. D. Costa, W. Liu, and J. S. Harris, Jr., "Reduction of Low-Frequency Noise In Npn AlGaAs/GaAs HBTs", Proc. from DRC Conference, University of Colorado Boulder, June 1991.

  144. G. Roos, N. M. Johnson, C. Herring and J. S. Harris, "Thermal Dissociation Energy of the Si-H Complex in n-type GaAs", Appl. Phys. Lett. 59, pp. 461-463, July 1991.

  145. B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "Electroabsorptive Modulators in InGaAs/AlGaAs", Appl Phys. Lett., 59 pp. 888-890, Aug. 1991.

  146. N. Yamada, G. Roos and J. S. Harris, Jr., "Threshold Reduction in Strained InGaAs Single Quantum Well Lasers by Rapid Thermal Annealing", Appl Phys. Lett., 59, pp. 1040-1042, Aug. 1991.

  147. W. Liu, D. Costa, and J. S. Harris, Jr., "Comparison of the Effects of Surface Passivation and Base Quasi-Electric Fields on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on GaAs and Si Substrates", Appl Phys. Lett., 59, pp. 691-693, Aug. 1991.

  148. S. Y. Chou, D. R. Allee, R. F. Pease and J. S. Harris, Jr., "Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers," Proc. of IEEE, 79, pp 1131-1139, Aug. 1991.

  149. B. Pezeshki, R. B. Apte. S. M. Lord, and J. S. Harris, "Quantum Well Modulators for Optical Beam Steering Applications", IEEE Phot. Tech. Lett., 3, pp.790-792, 9/91.

  150. N. Yamada and J. S. Harris, "Passive Q-Switching in InGaAs Strained Single Quantum Well Lasers Fabricated by Use of Quantum Well Intermixing", Proc. of IEEE, 1991.

  151. D. Costa and J. S. Harris, "Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors", Proc. of the 18th International Symposium on GaAs and Related Compounds, 9/91, Seattle, WA.

  152. B. Pezeshki, S. M. Lord, J. S. Harris, Jr., "Electro-Absorption in InGaAs/AlGaAs Quantum Wells", Proc. of the 18th International Symposium on GaAs and Related Compounds, Sept. 1991, Seattle, WA.

  153. K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale, and J. S. Harris, "Accumulation Mode GaAlAs/GaAs Bipolar Transistor with Two Dimensional Hole Gas Base", Proc. of the 18th International Symposium on GaAs and Related Compounds, Sept. 1991, Seattle WA.

  154. D. Costa, W. Liu, and J. S. Harris, Jr., "Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit", IEEE Trans. on Electron Dev., 38, pp. 2018-2024, Sept. 1991.

  155. R. Lodenkamper, M. M. Fejer, and J. S. Harris, Jr., "Surface Emitting Second Harmonic Generation in Vertical Resonator", Elect. Ltts., 27, pp. 1882-1884. 9/91.

  156. B. Pezeshki, S. M. Lord, T. B. Boykin, B. L. Shoop, and J. S. Harris, Jr., "AlGaAs/AlAs QW Modulator for 6328 åÅ Operation", Elect. Letts., 27, pp. 1971-1973, Oct. 1991.

  157. K. Yamamoto, R. H. Hammond, and J. S. Harris, Jr., "The Relative Effect on the Oxygen Concentration in YBa2Cu3O7-d of Atomic and Ionic Oxygen Fluxes, Produced by a Small Compact Electron Cyclotron Resonance Source", J. Vac. Sci. Technol., A9, pp. 2587-2593, Sept/Oct 1991.

  158. B. G. Park, E. Wolak and J. S. Harris, Jr., "Effect of High Current Density and Doping Concentration on the Characteristics of GaAs/AlAs Vertically Integrated Resonant Tunneling Diodes", Jrnl. Appl. Phys., Dec. 1991.

  159. J. J. L Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury, C. Portal, B. G. Park, W. Wolak, K. L. Lear and J. S. Harris, Jr., "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", Superlattices & Microstructures, 10, pp. 175-178, 1991.

  160. G. G. Zhou, A. Fischer-Colbrie, J. Miller, Y. C. Pao, B. Hughes L. Studebaker and J. S. Harris, Jr., "High Output Conductance of InAlAs/InGaAs/InP MODFET due to Weak Impact Ionization in the InGaAs Channel", IEDM Technical Digest, 12/91.

  161. J. H. Kim, I. Bozovic, J. S. Harris, Jr., W. Y. Lee, C. B. Eom, T. H. Geballe, and E. S. Hellman, "Plasmons in High-Temperature Superconductors", Physica C, 185, pp. 1019-1020, 1991.

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  162. B. L. Shoop, B. Pezeshki, J. W. Goodman, and J. S. Harris, Jr., "Noninterferometric Optical Subtraction using Reflection-Electroabsorption Modulators," Optics Letters, 17, pp.58-60, Jan. 1992.

  163. S. Takigawa, K. Bacher, L. B. Aronson, and J. S. Harris, Jr., "Low Threshold Current Grating-Coupled Surface-Emitting Strained-InGaAs Single Quantum Well Laser with GaAs Optical Confinement Structure", Appl. Phys. Lett., 60, pp. 265-267, Jan. 1992.

  164. B. L. Shoop, B. Pezeshki, J. W. Goodman, and J. S. Harris, Jr., "Laser-Power Stabilization Using a Quantum-Well Modulator," IEEE Photonics Tech. Lett., Feb. 1992.

  165. B. Pezeshki, G. A. Williams, and J. S. Harris, Jr. "Optical Phase Modulator Utilizing Electroabsorption in a Fabry-Perot Cavity," Appl. Phys. Lett. 60, pp. 1061-1063, March 1992.

  166. G. N. Nasserbakht, J. W. Adkisson, B. A. Wooley, J. S. Harris, Jr., T. I. Kamins, and S. S. Wong, "Monolithic Integration GaAs and Si Bipolar Devices for Optical Interconnect Systems", IEEE/ISCC Proc. International Solid State Circits Conference, San Francisco, 1992.

  167. W. Liu, and J. S. Harris, "Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs", Elect. Lett. 1992.

  168. H. Ito and J. S. Harris, Jr., "InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substratee," Elect. Lett., 28, No. 7, pp. 655-656, 26th March 1992.

  169. J. P. A. van der Wagt, K. L. Bacher, G. S. Solomon and J. S. Harris, Jr., "Geometrical Growth Rate Nonuniformity Effects on Reflection High-Energy Electron Diffraction Signal Intensity Decay," J. Vac. Sci. Technol. B, pp. 825-828, Mar/Apr 1992.

  170. S. M. Lord, G. Roos, B. Pezeshki and J. S. Harris, Jr., "Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells," Proc. from MRS Spring Meeting, 262, pp. 881-886, April/May 1992.

  171. W. Liu, D. Costa, and J. S. Harris, "A Simplified Model for the Distributed Base Contact Impedance in Heterojunction Bipolar Transistors", Solid State Elect. 35, pp. 547-552, 1992.

  172. W. Liu, D. Costa and J. S. Harris, Jr., "Derivation of the Emitter-Collector Transit Time of Heterojunction Bipolar Transistors", Solid State Elect. 35, pp 541-545, 1992.

  173. S. M. Lord, G. Roos, B. Pezeshki, J. S. Harris, Jr., and N. M. Johnson, "Enhancement of Photoluminescence Intensity in InGaAs/Al(x)Ga(1-x)As Quantum Wells by Hydrogenation," Appl. Phys. Lett. 60, pp. 2276-2278, May 1992

  174. H. Ito, O. Nakajima, T. Furuta, and J. S. Harris, Jr., "Influence of Dislocations on the DC Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Elect. Dev. Lett. 13, pp. 232-234, May 1992.

  175. N. Yamada and J. S. Harris, Jr., "Strained InGaAs/GaAs Single Quantum Well Lasers with Saturable Absorbers Fabricated by Quantum Well Intermixing," Appl. Phys. Lett. 60, pp. 2463-2465, May 1992.

  176. B. Pezeshki, S. M. Lord, T. B. Boykin and J. S. Harris, Jr., "GaAs/AlAs Quantum Wells for Electroabsorption Modulators," Appl. Phys. Lett., 60, pp. 2779-2781, 6/92.

  177. W. Liu, J. S. Harris, Jr., "Effects of Replacing a Portion of the AlGaAs Base-Emitter Junction of Heterojunction Bipolar Transistors by GaAs," Int. Jrnl. Elect. 72, pp. 401-408, 1992.

  178. B. Pezeshki, D. Liu, S. M. Lord and J. S. Harris, Jr. "Visible Wavelength Fabry-Perot Reflection Modulator Using Indirect-Gap AlGaAs/As," Elect. Lett. 28, pp. 1170-1171, June 1992.

  179. S. D. Kim and J. S. Harris, Jr., "Stacking Fault Stability in GaAs/Si Hetero-Epitaxial Growth," Jrnl. Cryst. Grwth, 123, pp. 439-444, June 1992.

  180. I. Bozovic, J. H. Kim, J. S. Harris, E. S. Hellman, E. H. Hartford and P. K. Chan, "Free Chare-Carrier Plasmons in Ba1-x KxBi03: A Close Relation to Cuprate Superconductors," Phys. Rev. B, 46 pp. 1182-1187, June 1992.

  181. W. Liu and J. S. Harris, "Mesa Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors with an Emitter-Base-Emitter Structure," J. Vac. Sci. Technol. B, pp. 1285-1290, Jul/Aug 1992.

  182. T. B. Boykin and J. S. Harris, Jr., "X-Valley Tunneling in Single AlAs Barriers," Jrnl. Appl. Phys. 72, pp. 988-992, Aug. 1992.

  183. W. Liu and D. Hill D. Costa and J. S. Harris, Jr., "High-Performance Microwave AlGaAs-InGaAs Pnp HBT with High-DC Current Gain," IEEE Microwave & Guided Wave Letts. 2, pp. 331-333, Aug. 1992.

  184. W. Liu and J. S. Harris, "Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transisitors," Jpn. J. Appl. Phy. 31, pp. 2349-2351, Aug. 1992.

  185. K. Bacher, B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with In Situ Corrections," Appl. Phy. Lett. 61 pp. 1387-1889, Sept. 1992.

  186. W. S. Fu, J. S. Harris, Jr., R. Binder, S. W. Koch, J. F. Klem and G. R. Olbright, "Nonlinear Optical Properties and Ultrafast Response of GaAs/AlAs Type-II Quantum Wells," IEEE JQE, 28, pp. 2404-2415, Oct. 1992.

  187. G. Roos, N. M. Johnson, Y. C. Pao, J. S. Harris, Jr. and C. Herring, "Hydrogen Passivation of Si and Be Dopants in InAlAs," Mat. Res. Soc. Symp. Proc. 240, pp. 667-672, 1992.

  188. W. Liu and J. S. Harris, Jr., "Parastic Conduction Current in the Passivation Ledge of AlGaAs/GaAs Heterojunction Bipolar Transistors," Solid State Elect. 35, pp. 891-895, 1992.

  189. Y. C. Pao and J. S. Harris, Jr., "Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT's," IEEE Electron Dev. Lett. 13, pp. 535-537, 1992.

  190. W. Liu and J. S. Harris, Jr., "Current Dependence of Base-Collector Capacitance of Bipolar Transistors," Solid State Elect. 35, pp. 1051-1057, 1992.

  191. S. M. Lord, B. Pezeshki and J. S. Harris, Jr., "Investigation of High In Content InGaAs Quantum Wells Grown on GaAs by Molecular Beam Epitaxy," Elect. Lett. 28, pp. 1193-1195, 1992.

  192. T. B. Boykin, B. Pezeshki and J. S. Harris, Jr., "Anti-Resonances in the Transmission of a Simple Two-State Model," Phys. Rev. B, 1992.

  193. S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 mm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer," Jrnl. Crys. Grwth. pp. 759-764, 1992.

  194. W. S. Fu, G. R. Olbright, J. F. Klem and J. S. Harris, Jr., "Optical Gain and Ultrafast Nonlinear Response in GaAs/AlAs Type-II Quantum Wells," Appl. Phys. Lett. 14 pp. 1661-1663, Oct. 1992.

  195. S. Takigawa, D. Bacher, L. B. Aronson and J. S. Harris, Jr., "Design and Performance of a Low-Threshold-Current Grating-Coupled Surface-Emitting Laser," Solid State Elect. 35, pp. 1241-1245, 1992.

  196. D. Costa and J. S. Harris, Jr., "Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Trans. Elect. Dev. 39, pp. 2383-2394, Oct. 1992.

  197. W. Liu, D. Costa and J. S. Harris, Jr., "Current Gain of Graded AlGaAs/GaAs Heterojunction Bipolar Transistors With and Without a Base Quasi-Electric Field," IEEE Tran. Elect. Dev. 39, pp. 2422-2429, Nov. 1992.

  198. S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, Jr., R. Fernandez and A. Harwit, "Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs on GaAs for Optoelectronics," Proc. MRS Fall Meeting, 1992.

  199. W. Liu and J. S. Harris, "Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transisitors," IEEE Trans. Elect. Dev. 39, pp. 2726-2732, Dec. 1992.

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  200. S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, Jr., "1.3 mm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer," Proc. from the Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmund, Germany, pp. 759-764, 1993. REFER TO #193

  201. G. S. Solomon, G. Roos and J. S. Harris, Jr., "The Effect of Si Doping on DX Centers in Al.26Ga.74As", Proc. from the Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmund, Germany, pp. 737-741, 1993. REFER TO #205

  202. J. P. A van der Wagt and J. S. Harris, Jr., "Simulation of RHEED Intensity Oscillations during MBE Growth," Proc. from the Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmund, Germany, pp. 1025-1029, 1993. REFER TO #206

  203. S. M. Lord, G. Roos, J. S. Harris and N. M. Johnson, "Hydrogen Passivation of Nonradiative Defects in InGaAs/AlxGa1-xAs Quantum Wells," Jrnl. Appl Phys. Jan. 1993.

  204. W. Liu and J. S. Harris, "Critical Passivation Ledge Thickness in AlGaAs/GaAs Heterojunction Bipolar Transistors," J. Vac. Sci. Technol. B 11, pp. 6-9 Jan/Feb 1993.

  205. G. S. Solomon, G. Roos and J. S. Harris, Jr., "The Effect of Si Planar Doping on DX Centers in Al0.26Ga0.74As," Jrnl. Crys. Grwth. 127, pp. 737-741, 1993.

  206. J. P. A. van der Wagt and J. S. Harris, Jr., "Simulation of RHEED Intensity Oscillations During MBE Growth," Jrnl. Crys. Grwth. 127, pp. 1025-1029, 1993.

  207. D. Liu, B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "Phase Characteristics of Reflection Electro-Absorption Modulators," Appl. Phys. Letts. 62, pp. 2158-2160, May 1993.

  208. W. Liu and J. S. Harris, Jr., "Cut-off Frequency and D.C. Gain of Heterojunction Bipolar Transisitrs," Int. J. Electronics 74, pp. 401-106, 1993.

  209. H. Ito and J. S. Harris, Jr. "Lattice Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates," IEEE Trans. Ed, 1993.

  210. H. C. Chui, S. M. Lord, E. Martinet, M. M. Fejer and J. S. Harris, Jr., "Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells," Appl. Phys. Lett. July 1993.

  211. J. A. Trezza, B. Pezeshki, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "High Contrast Asymmetric Fabry-Perot," Appl Phys. Lett. 74, pp.452-454, Aug. 1993.

  212. S. M. Lord, J. A. Trezza, M. C. Larson, B. Pezeshki, and J. S. Harris, Jr., "1.3mm Electroabsorption Reflection Modulators on GaAs," Appl. Phys. Lett. 63 pp. 806-808, Aug. 1993.

  213. J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "Large, Low-Voltage Absorption Changes and Absorption Bistability in GaAs/AlGaAs/InGaAs Asymmetric Quantum Wells," J. Appl. Phys. 74, pp. 1972-1978, Aug. 1993.

  214. J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, "Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells," J. Appl. Phys. 74, p. 6495, Dec. 1, 1993.

  215. S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, Jr., R. Fernandez and A. Harwit, "Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics," Mat. Res. Soc. Symp. Proc. 281, pp. 221-225, 1993.

  216. J. A. Trezza, B. Pezeshki, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "High Contrast Reflection Electro-absorption Modulators with Zero Phase Change," J. Appl. Phys. Lett., 63, 452.

  217. H. Ito and J. S. Harris, Jr., "Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates," Jpn. J. Appl. Phys., 32 (1993), pp. 4923-4927, Part 1, No. 11A, Nov. 1993.

  218. R. Lodenkamper, M. L. Bortz, M. M. Fejer, K. Bacher and J. S. Harris, Jr., "Surface-emitting Second-harmonic Generation in a Semiconductor Vertical Resonator," Optics Letters, 18 (21), pp. 1798-1800, Nov. 1, 1993.

  219. J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells," J. Appl. Phys. 74 (11), pp. 6495-6502, Dec. 1993.

  220. J. A. Trezza, M. C. Larson and J. S. Harris, Jr., "Zero Chirp Quantum Well Asymmetric Fabry-Perot Reflection Modulators Operating Beyond the Matching Condition," J. Appl. Phys. 74 (12), pp. 7061-7066, Dec. 1993.

  221. S. M. Lord, B. Pezeshki, J. S. Harris, Jr., "Electroabsorption Modulators Operating at 1.3 mm on GaAs substrates," Optical and Quantum Electronics, 25 (1993), P. S953-S964.

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  222. H. C. Chui, W. L. Martinet, M. M. Fejer, and J. S. Harris, Jr., "Short Wavelength Intersubband Transitions in InGaAs/AlGaAs Quantum Wells Grown on GaAs," Appl. Phys. Lett. 64 (6), pp.736-8, Feb. 1994.

  223. H. C. Chui and J. S. Harris, Jr., "Growth Studies on In0.5Ga0.5As/AlGaAs Quantum Wells Grown on GaAs with a Linearly Graded InGaAs Buffer," J. Vac. Sci. Technol. B 12 (2), pp. 1019-1022, Mar/Apr 1994.

  224. H. C. Chui, E. L. Martinet, M. M. Fejer, and J. S. Harris, Jr., "Large Energy Intersubband Transitions in High Indium Content InGaAs/AIGaAs Quantum Wells," NATO ASI: Quantum Well Intersubband Transition Physics and Devices, H. C. Liu, B. F. Levine, J. Y. Andersson, eds., Kluwer Academic Publishers, pp. 251-9, 1994.

  225. S. Kim, H. Lee, J. S. Harris, Jr., "MBE Growth of In0.65Ga0.35As Quantum Wells on GaAs Substrates for 1.5m Exciton Resonance," J. Crystal Growth 141, 37-43, 1994.

  226. M. V. Weckwerth, J. P. A. van der Wagt, and J. S. Harris, Jr., "Observation of Quantum Mechanical Reflections of Electrons at an In-situ Grown GaAs/Aluminum Schottky Barrier," J. Vac. Sci. Technol. B 12 (2), pp. 1303-5, Mar/Apr 1994.

  227. J. P. A. van der Wagt and J. S. Harris, Jr., "Reflection High-energy Electron Diffraction Intensity Oscillations During Molecular Beam Epitaxy on Rotating Substrates," J. Vac. Sci. Technol. B 12 (2), pp. 1236-8, Mar/Apr 1994.

  228. R. E. Carnahan, M. A. Maldonado, K. P. Martin, R. J. Higgins, J. P. A. van der Wagt and J. S. Harris, Jr., "Observation of Resonant Tunneling Through Localized Continuum States in Electron Wave Interference Diodes," Appl. Phys. Lett. 64 (18) pp. 2403-2405, May 2, 1994.

  229. S. Schwyn Thöny, K. E. Youden, J. S. Harris Jr., and L. Hesselink, "Growth of Epitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition," Appl. Phys. Lett. 65 (16) pp. 2018-2020.

  230. J. A. Trezza, and J. S. Harris, Jr., "Creation and Optimization of Vertical Cavity Phase Flip Modulators," J. of Appl. Phys., 75 (10), May 15, 1994.

  231. G. S. Solomon, D. Kirillov, H. C. Chui, and J. S. Harris, Jr., "Determination of AIAs Mole Fraction in Alx Ga1-xAs using Raman Spectroscopy and x-ray Diffraction" J. Vac. Sci. Technol. B 12 (2), pp. 1078 - 1081, Mar/Apr 1994.

  232. D. J. Miller and J. S. Harris, Jr., "50 nm GaAs/AlAs Wire Structures Grown on Corrugated GaAs," J. Vac. Sci. Technol. B 12 (2), p.1286 - p.1289, Mar/Apr 1994.

  233. G. G. Zhou, A. Fischer-Colbrie and J. S. Harris, Jr., "I-V Kink in InAIAs/InGaAs MODFETs due to Weak Impact Ionization Process in the InGaAs Channel," Proc. of the 6th International Conference on InP and Related Materials, pp. 435-538, Santa Barbara, CA, Mar. 1994.

  234. E. L. Martinet, B. J. Vartanian, G. L. Woods, H. C. Chui, J. S. Harris, Jr., and M. M. Fejer, "Applications of High Indium Content InGaAs/AIGaAs Quantum Wells in the 2-7um Regime," NATO ASI: Quantum Well Intersubband Transition Physics and Devices, H. C. Liu, B. F. Levine, J. Y. Andersson, eds., Kluwer Academic Publishers, pp. 261-273 (1994).

  235. M. S. Brandt, J. W. Ager III, W. Götz, N. M. Johnson, J. S. Harris, Jr., R. J. Molnar and T. D. Moustakas, "Local Vibrational Modes in Mg-doped Gallium Nitride," Phys. Rev. B (49) pp.14758-14761, 15 May, 1994.

  236. H. C. Chui, E. L. Martinet, G. L. Woods, M. M. Fejer, and J. S. Harris, Jr., "Doubly Resonant Second Harmonic Generation of 2.0 um Light in Coupled InGaAs/AIAs Quantum Wells," Appl. Phys. Lett. 64 (25) p. 3365-3367, 20 June 1994.

  237. B. J. Vartanian and J. S. Harris, Jr., "Normal Incidence Intersubband Hole Absorption in In0.5Ga0.5As/Al0.45Ga0.55As Quantum Wells," Quantum Well and Superlattice Physics V, G. H. Dohler, E. S. Koteles, Eds., Proc. SPIE 2139, pp. 27-36, 1994.

  238. E. L. Martinet, G. L. Woods, H. C. Chui, J. S. Harris, Jr., M. M. Fejer, C. A. Rella, and B. A. Richman, "Free-electron Laser Nonlinear Spectroscopy of Doubly Resonant (5.5-3.0 mm and 4.1-2.1 mm) InGaAs/AlGaAs Asymmetric Quantum Wells," Quantum Well and Superlattice Physics V, G. H. Dohler, E. S. Koteles, Eds., Proc. SPIE 2139, pp. 331, 1994.

  239. E. L. Martinet, H. C. Chui, G. L. Woods, M. M. Fejer, J. S. Harris, Jr., C. A. Rella, B. A. Richman and H. A. Schwettman, "Short Wavelength (5.36 mm to 1.85 mm) Nonlinear Spectroscopy of Coupled InGaAs/AlAs Intersubband Quantum Wells," APL 65 (21) Nov. 21, 1994.

  240. M. V. Weckwerth, C. Y. Hung, Y. C. Pao, and J. S. Harris, Jr., "Epitaxial Growth of Thick Pesudomorphic NiAl Metal Films on GaAs by Migration Enhanced Epitaxy," J. of Crystal Growth, 00, pp. 1-4, 1994.

  241. I. Bozovic, J. H. Kim, J. S. Harris, Jr., C. B. Eom, J. M. Phillips, and J. T. Cheung, "Reflectance and Raman Spectra of Metallic Oxides, LaSrCoO and CaSrRuO: Resemblance to Superconducting Cuprates," Phys. Rev. Lett. 73 (10), pp. 1436-1439, Sept. 5, 1994.

  242. J. Knall, L. T. Romano, D. K. Biegelsen, R. D. Bringans, H. C. Chui, J. S. Harris, Jr., D. W. Treat and D. P. Bour, "The Use of Graded InGaAs Layers and Patterned Substrates to Remove Threading Dislocations from GaAs on Si," J. of Appl. Phys. 76 (5) pp. 2697-2702, Sept. 1, 1994.

  243. C. M. Marcus, R. M. Clarke, I. H. Chan, C. I. Duruöz, and J. S. Harris, Jr., "Phase-Breaking Rates from Conductance Fluctuations in a Quantum Dot," Semicond-Sci. Technol. 9 (1994) pp. 1897-1901.

  244. L. E. Eng, K. Bacher, W. Yuen, J. S. Harris, Jr., and C. J. Chang-Hasnain, "Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates," Journal of Quantum Electronics, XX (Y) PP. 100-103, Oct. 1994.

  245. H. Ito and J. S. Harris, Jr., "Influence of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quantum-Well Lasers," Jpn. J. Appl. Phys. 33 (1994) pp. 6516-6517 Part 1, (12A), Dec. 1994.

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  246. J. A. Trezza and J. S. Harris, Jr., "Coupled Quantum Wells for Optical Modulation," Confined Electron and Photon Systems, ed. E. Burnstein and C. Weisbuck (Plenum Press, 1995) pp.759-764.

  247. H. C. Chui, G. L. Woods, M. M. Fejer, E. L. Martinet and J. S. Harris, Jr., "Tunable Mid-Infrared Generation by Difference Frequency Mixing of Diode Laser Wavelengths in Intersubband InGaAs/AlAs Quantum Wells," Appl. Phys. Lett. 66 (3), pp. 265-267, Jan. 1995.

  248. G. S. Solomon, J. A. Trezza and J. S. Harris, Jr., "Substrate Temperature and Monolayer Coverage Effects on Epitaxial Ordering of InAs and InGaAs Islands on GaAs," Appl. Phys. Lett. 66 (8), pp. 991-993, Feb. 1995.

  249. L. E. Eng, K. Toh, C. J. Chang-Hasnain, K. L. Bacher and J. S. Harris, Jr., "Periodic Mode Shift in Vertical Cavities Grown by Molecular Beam Epitaxy," Photonics Technol. Lett. 7 (3), pp. 235-237, Mar. 1995.

  250. L. E. Eng, K. L. Bacher, W. Yuen, M. C. Larson, G. Ding, J. S. Harris, Jr., and C. J. Chang-Hasnain, "Wavelength Shift in Vertical Cavity Laser Arrays on a Patterned Substrate," Electr. Lett. 31, pp. 562-563, Mar. 1995.

  251. J. W. Eldredge, K. M. Matney, M. S. Goorsky, H. C. Chui and J. S. Harris, Jr., "Effect of Substrate Miscut on the Structural-properties of InGaAs Linear Graded Buffer Layers Grown by Molecular-beam Epitaxy on GaAs," J. Vac. Sci. & Technol. B, 13 (2), pp. 689-691, Mar.-Apr. 1995.

  252. M. C. Larson, B. Pezeshki, and J. S. Harris, Jr., "Vertical Coupled-cavity Microinterferometer on GaAs with Deformable-Membrane Top Mirror," IEEE Photonics Tech. Lett. 7 (4), pp. 382-384, Apr. 1995.

  253. C. I. Duroz, R. M. Clarke, C. M. Marcus, and J. S. Harris, Jr., "Conduction Threshold, Switching, and Hysteresis in Quantum Dot Arrays," Phys. Rev. Lett. 74 (16), pp. 3237-3240, Apr. 1995.

  254. S.-D. Kim, H. J. Lee, and J. S. Harris, Jr. "Interface Smoothing of High Indium Content InGaAs Layers on GaAs," J. Electrochem. Soc., 142 (5), pp. 1667-1670, May 1995.

  255. L. E. Eng, K. L. Bacher, W. Yuen, J. S. Harris, Jr., and C. J. Chang-Hasnain, "Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates," IEEE J. of Select Topics in Quantum Electronics, 1, pp. 624-628, June 1995.

  256. M. Yuri, J. S. Harris, Jr., T. Takayama, O. Imafuji, H. Naito, M. Kume, K. Itoh and T. Baba, "2-dimensional Analysis of Self-sustained Pulsation for Narrow-stripe Algaas Lasers," IEEE J. of Selected Topics in Quantum Electronics 1 (2), pp. 473-479, June 1995.

  257. S. Schwyn-Thony, K. E. Youden, J. S. Harris, Jr., and L. Hesselink, "Growth and Characterization of Epitaxial Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition," J. of Electronic Materials, 1995.

  258. D. B. Oberman, H. Lee, W. K. Gvtz and J. S. Harris, Jr., "Molecular Beam Epitaxy of Gallium Nitride by Electron Cyclotron Resonance Plasma and Hydrogen Azide," J. Crystal Growth 150, pp. 912-915, 1995.

  259. M. V. Weckwerth, C. Y. Hung, Y. C. Pao and J. S. Harris, Jr., "Epitaxial Growth of Thick Pseudomorphic NiAl Metal Films on GaAs by Migration Enhanced Epitaxy," J. Crystal Growth 150, pp. 1150-1153, 1995.

  260. G. S. Solomon, J. A. Trezza and J. S. Harris, Jr., "Effects of Monolayer Coverage, Flux Ratio, and Growth Rate on the Island Density of InAs Islands on GaAs," Appl. Phys. Lett. 66 (23), pp. 3161-3163, June 1995.

  261. R. M. Clarke, I. H. Chan, C. M. Marcus, C. I. Duruvz, J. S. Harris, Jr., K. Campman and A. C. Gossard, "Temperature Dependence of Phase Breaking in Ballistic Quantum Dots," Phys. Rev. B 52 (4), pp. 2656-2659, July 1995.

  262. S. D. Kim, J. A. Trezza and J. S. Harris, Jr., "Observation of 1.5mm Quantum Confined Stark Effect in InGaAs/AlGaAs Multiple Quantum Wells on GaAs Substrates," J. of Vac. Sci. Tech. B 13 (4), pp. 1526-1528, July 1995.

  263. K. L. Bacher and J. S. Harris, Jr., "A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors," J. Electrochem. Soc., 142 (7), pp. 2386-2388, July 1995.

  264. M. C. Larson and J. S. Harris, Jr., "Broadly Tunable Resonant-cavity Light Emission," Appl. Phys. Lett. 67 (5), pp. 590-592, July 1995.

  265. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Jr., "Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process," 1995 International Conference on Solid State Devices and Materials, International House, Osaka, Japan, pp. 192-194, Aug. 1995.

  266. B. Sung, H. C. Chui, E. L. Martinet and J. S. Harris, Jr., "Intersubband Transitions to the Above-Barrier States Controlled by Electron Bragg Mirrors," 22nd International Symposium on Compound Semiconductors, Cheju Island, Korea, pp. 1187-1192, Aug./Sept. 1995.

  267. H. Lee, D. B. Oberman and J. S. Harris, Jr., "Reactive Ion Etching of GaN using CHF3/Ar and C2CIF5/Ar Plasmas," Appl. Phys. Lett. 67 (12), pp. 1754-1756, Sept. 1995.

  268. G. S. Solomon, C. I. Duruvz, J. A. Trezza, R. M. Clarke, C. M. Marcus and J. S. Harris, Jr. "Growth Induced and Patterned 0-Dimensional Quantum Structures," in Low Dimensional Structures Prepared by Epitaxial Growth of Regrowth on Patterned Substrates, K. Eberl et al. (eds.) pp. 313-324, 1995.

  269. M. C. Larson, A. R. Massengale and J. S. Harris, Jr., "Continuously Tunable Micro-Electromechanical Vertical-cavity Surface-emitting Lasers," International J. of Optoelectronics, 10 (5), pp. 401-408, Sep-Oct 1995.

  270. Y. Okada, J. S. Harris, Jr., A. Sutoh and M. Kawabe, "GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy," Proc. of the MRS 1995 Fall Meeting, Boston MA, Nov. 1995.

  271. M. C. Larson and J. S. Harris, Jr., "Broadly -Tunable Resonant-Cavity Light-emitting Diode," IEEE Photonics Technology Lett. 7 (11), pp. 1267-1269, Nov. 1995.

  272. G. Y. Ding, S. W. Corzin, M. R. Tan and S. Y. Wang, "Modeling of Turn-on Jitter in Vertical Cavity Surface Emitting Lasers," Elec. Lett., Dec. 1995

  273. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Jr., "Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano-Oxidation Process," Proc. of IEDM., pp. 363-366, Washington DC, Dec. 1995.

  274. L. A. Eyres, C. B. Ebert, H. C. Chui, J. S. Harris, Jr., and M. M. Fejer, "Fabrication of GaAs Orientation Template Substrates for Quasi-Phasematched Guided-Wave Nonlinear Optics," Nonlinear Guided Waves and Their Applications 6, 1995 OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), pp. 156-158, 1995.

  275. D. J. Bone, H. Lee, K. Williams, J. S. Harris, Jr., and R. F. W. Pease, "Characterization of In-situ Variable-energy Focused Ion Beam/MBE Mqw Structures," Institute of Physics Conference Series 141, pp. 359-362, 1995.

  276. D. B. Oberman, H. Lee, W. K. Gotz and J. S. Harris, Jr., "MBE growth of GaN with Ecr Plasma and Hydrogen Azide," Institute of Physics Conference Series, 141, pp. 131-136, 1995.

  277. H. Lee, D.B. Oberman, W. Gotz and J. S. Harris, Jr., "Heteroepitaxial growth of GaN on GaAs by ECR Plasma-assisted MBE," Institute of Physics Conference Series 141, pp. 125-130, 1995.

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  278. J. A. Trezza, M. Morf and J. S. Harris, Jr., "Creation and Optimization of Vertical Cavity X-Modulators," IEEE J. Quant. Elect. 32 (1), pp. 53-60, Jan. 1996.

  279. J. S. Powell, J. A. Trezza, M. Morf and J. S. Harris, Jr., "Vertical Cavity X-Modulators for WDM," Photonics West 1996, San Jose, CA, pp. 207-216, Jan. 1996.

  280. M. C. Larson and J. S. Harris, Jr., "Wide and Continuous Wavelength Tuning in a Vertical Cavity Surface Emitting Laser Using a Micromachined Deformable Membrane Mirror," Appl. Phys. Lett. 68 (7), pp. 891-893, Feb. 1996.

  281. M. C. Larson, A. R. Massengale and J. S. Harris, Jr., "Continuously-tunable Micromachined Vertical-cavity Surface-emitting Laser with 18 nm Range," Electr. Lett. 32 (4), pp. 330-332, Feb. 1996.

  282. A. R. Massengale, M. C. Larson, C. Dai and J. S. Harris, Jr., "Collector-up AlGaAs/GaAs Heterojunction Bipolar Transistors using Oxidized AlAs for Current Confinement," Electr. Lett. 32 (4), pp. 399-401, Feb. 1996.

  283. C. I. Duruoz, R. M. Clarke, C. M. Marcus and J. S. Harris, Jr., "Switching and Hysteresis in Quantum Dot Arrays," J. of Nanotechnology 7 (4), pp. 372-375, 1996.

  284. G. S. Solomon, J. A. Trezza, A. F. Marshall and J. S. Harris Jr., "Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs," Phys. Rev. Lett. 76, (6), pp. 952-955, Feb. 1996.

  285. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Jr., "Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System," Appl. Phys. Lett. 68 (1), pp. 34-36, 1996.

  286. G. Pilling, D. H. Cobden, P. L. McEuen, C. I. Duruvz and J. S. Harris, Jr., "Intrinsic Bistability in Nonlinear Transport Through a Submicron Lateral Barrier," Surface Science 362 (1-3), pp. 652-655, 1996.

  287. M. V. Weckwerth, J. S. Harris, Jr. and Y. C. Pao, "The Mechanical Properties of NiAI Grown on GaAs by Molecular Beam Epitaxy," Proc. of the ECS

  288. L. E. Eng, K. Toh, C. J. Chang-Hasnain, K. L. Bacher and J. S. Harris, Jr., "Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy," Photon. Techn. Lett. 7 (3), pp. 235-237, Mar. 1995.

  289. S. D. Kim, S. M. Lord and J. S. Harris, Jr., "Strain Relaxation in Compositionally Graded Epitaxial Layers," J. of Vac. Sci & Techno. B 14 (2), pp. 642-646, Mar/Apr 1996.

  290. M. A. Cappelli, A. E. Kull, K. Schwendner, H. Lee, J. S. Harris, Jr. and J. Mroczkowski, "GaN Film Growth by a Supersonic Arcjet Plasma," Proc. of MRS Spring Meeting in San Francisco, Apr. 1996.

  291. E. Tuncel, D. B. Oberman, H. Lee, T. Ueda and J. S. Harris, Jr., "Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates," Proc. of MRS Spring Meeting in San Francisco, Apr. 1996.

  292. T. F. Huang, E. Tuncel, J. S. Yeo and J. S. Harris, Jr., "Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition," Proc. of MRS Spring Meeting in San Francisco, Apr. 1996.

  293. B. N. Shimbo, S. A. Komarov, B. J. Vartanian, Y. Okada and J. S. Harris, Jr., "Atomic Force Microscope Chemically Induced Direct Processing," Proc. of MRS Spring Meeting in San Francisco, Apr. 1996.

  294. C. Y. Hung, M. V. Weckwerth, M. R. Visokay, Y. C. Pao and J. S. Harris, Jr., "Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film," Proc. of Spring MRS Conference, San Francisco, CA, Apr. 1996.

  295. T. Ueda, M. Yuri, H. Lee, J. S. Harris, Jr. and T. Baba, "Photoluminescence Study of Chloride Vpe-Grown GaN," Mat. Res. Soc. Symp. Proc. 421 pp.189 - 193, MRS Spring Meeting in San Francisco, Apr. 1996.

  296. M. Yuri, T. Ueda, H. Lee, K. Itoh, T. Baba and J. S. Harris, Jr., "Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia," Proc. of MRS Spring Meeting in San Francisco, Apr. 1996.

  297. H. Lee, M. Yuri, T. Ueda and J. S. Harris, Jr., "Thermodynamic Analysis and Growth Characterization of Thick GaN Films Grown by Chloride VPE using GaCl3/N2 and NH3/N2," Proceeding of MRS Spring Meeting in San Francisco, Apr. 1996.

  298. H. Lee, D. B. Oberman and J. S. Harris Jr., "Reactive Ion Etching of Gallium Nitride Films," J. of Electric Materials, 25 (5) pp. 835-837, May 1996.

  299. B. Sung, H. C. Chui, E. L. Martinet and J. S. Harris, Jr., "Control of Quasi-Bound States by Electron Bragg Mirrors in GaAs/Al0.3Ga0.7As Quantum Wells," Appl. Phys. Lett. 68 (19), pp. 2720 - 2722, May 1996.

  300. K. L. Vodopyanov, V. Chazapis, C. C. Phillips, B. Sung and J. S. Harris, Jr., "Saturation Study of III-V Multi Quantum Well Bound-to-Bound and Bound-to-Quasibound Intersubband Transitions in the l = 3-10 mm Spectral Range," Semicond. Sci. Techno. May 1996.

  301. J. Martin, B. A. Paldus, P. Zalicki, E. H. Wahl, T. G. Owano, J. S. Harris, Jr., C. H. Kruger and R. N. Zare, "Cavity Ring-down Spectroscopy with Fourier-transform-limited Light Pulses," Chem. Phys. Lett. 258, pp. 63 - 70, May 1996.

  302. Y. Okada and J. S. Harris, Jr., "Basic Analysis of Atomic-scale Growth Mechanisms for Molecular Beam Epitaxy of GaAs using Atomic Hydrogen as a Surfactant," J. Vac. Sci. Technol. B 14 (3), pp. 1725 - 1728, May/Jun 1996.

  303. G. S. Solomon, J. A. Trezza, A. F. Marshall and J. S. Harris, Jr, "Structural and Photoluminescence Properties of Growth-induced InAs Island Columus in GaAs," J. Vac. Sci. Technol. B 14 (3), pp. 2208-2211, May/Jun 1996.

  304. J. S. Harris, Jr. and K. Matsumoto, "Fabrication of Novel Quantum Devices-Toward Room Temperature Operation of Single Electron Devices," Proc. Taipei International Symposium on Recent Developments in New Technologies, Taipei, Taiwan, pp. 14, June 1996.

  305. B. Sung, G. L. Woods, C. W. Rella, H. A. Schwettman, M. M. Fejer and J. S. Harris, Jr. "Control of Quasi-Bound States by Electron Bragg Mirrors and electron Lifetime Measurements in GaAs/AlGaAs Quantum Wells," Proc. of LEOS Non-Linear Optics Meeting, Maui, HI, July 1996.

  306. K. Matsumoto, M. Ishii, J-I. Shirakashi, B. J. Vartanian and J. S. Harris, Jr., "Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature made by STM/AFM Nano-Oxidation Process," Proc. SSDM 96, Yokohama, Japan, pp 433 - 435, Aug. 1996.

  307. J. S. Harris, Jr. "Broad-Range Continuous Wavelength Tuning in Microelectronmechanical Vertical Cavity Surface Emitting Lasers," Proc. of LEOS Workshop on Optical MEMS, Keystone, CO, Aug. 1996.

  308. J. S. Harris, Jr., "Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing," Technical Digest IEEE/LEOS: Nonlinear Optical Meeting, Maui, HI, Aug. 1996.

  309. J. S. Harris, Jr, M. C. Larson and A. R. Massengale, "Broad-Range Continuous Wavelength Tuning in Microelectromechanical Vertical-Cavity Surface-Emitting Lasers," Digest IEEE/LEOS 1996 Summer Topical Meetings, Aug. 1996.

  310. G. S. Solomon, M. C. Larson and J. S. Harris, Jr., "Electroluminescence in Vertically Aligned Quantum Dot Multilayer Light-emitting Diodes Fabricating by Growth-induced Islanding," Appl. Phys. Lett., 69 (13), pp. 1897-1899, Sept. 1996.

  311. J. A. Trezza and J. S. Harris, Jr., "Two-State Electrically Controllable Phase Diffraction Grating Using Arrays of Vertical-Cavity Phase Flip Modulators," IEEE Photonics Technology Lett. 8 (9), pp. 1211-1213, Sept. 1996.

  312. D. Kirillov, H. Lee and J. S. Harris, Jr., "Raman Scattering Study of GaN Films," J. Appl. Phys. 80 (7), pp. 4085 - 4062, Oct. 1996.

  313. Y. Okada and J. S. Harris, Jr., "Deep Level Defects in GaAs on Si Substrates Grown by Atomic Hydrogen Assisted Molecular Beam Epitaxy," J. Appl. Phys. 80 (8), pp. 4770-4772, Oct. 1996.

  314. J. S. Powell, J. A. Trezza, M. Morf and J. S. Harris, Jr., "Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing," International Conf. Massively Parallel Processing Using Optical Interconnections 1996, Maui, HI, Oct. 1996.

  315. C. Y. Hung, M. V. Weckwerth, A. F. Marshall, Y. C. Pao and J. S. Harris, Jr., "Observation of Super-Structure in High-Quality Pseudomorpic Film of NiAl grown on GaAs," J. of Crystal Growth, 169 (2) pp. 201-208, Nov. 1996.

  316. T. Ueda, M. Yuri, T-F Huang, S. G. Spruytte, H. Lee, K. Itoh, T. Baba and J. S. Harris, Jr., "Chloride VPE Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer," Proc. of 1996 MRS Fall Meeting, Boston, MA, Dec. 1996.

  317. M. C. Larson, F. Sugihwo, A. R. Massengale and J. S. Harris, Jr., "Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers," 1996 International Electron Devices Meeting Technical Digest, Dec. 1996.

  318. J. S. Harris, Jr., "Application of Micro-Electro-Mechanical Systems to Optoelectronics," Proc. of IEDMS Conf., Hsinchu, Taiwan, Dec. 1996.

  319. K. Matsumoto, M. Ishii, J-I Shirakashi, B. J. Vartanian and J. S. Harris, Jr., "Size Dependence of Room Tempeature Operated Side Gate Single Electron Transistor with Multi-Islands Structure made by STM/AFM Nano-Oxidation Process," Proc. IEDM, San Francisco, CA, Dec. 1996.

  320. H. Lee and J. S. Harris, Jr., "Vapor Phase Epitaxy of GaN using GaCl3/N2 and NH3/N2," J. of Crystal Growth, 169, pp. 689-696, 1996.

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  321. A. Kameyama, A. R. Massengale, C. H. Dai and J. S. Harris, Jr., "Analysis of Device Parameters for Pnp-Type AlGaAs/GaAs HBTs Including High-Injection Using New Direct Parameter Extraction," IEEE Trans. on Elect. Dev., 44 (1), pp. 1-10, Jan. 1997.

  322. J. A. Trezza, J. S. Powell and J. S. Harris, Jr., "Zero Chirp Asymmetric Fabry-Perot Electroabsorption Modulator Using Coupled Quantum Wells," IEEE Photonics Technology Lett., 9 (3), pp. 330-332, Mar. 1997.

  323. B. Sung, H. C. Chui, M. M. Fejer and J. S. Harris, Jr., "Near-infrared Wavelength Intersubband Transitions in High Indium Content InGaAs/AlAs Quantum Wells Grown on GaAs," Electron. Lett, 33 (9), pp. 818-820, Apr. 1997.

  324. Y. Okada, J. S. Harris, Jr., A. Sutoh and M. Kawabe, "Growth of Abrupt GaAs/Ge Heterointerfaces by Atomic Hydrogen-assisted Molecular Beam Epitaxy," J. Crystal Growth, 175 (pt.2), pp. 1039-1044, May 1997.

  325. G. S. Solomon, S. A. Komarov, J. S. Harris, Jr., and Y. Yamamoto, "Increased Size Uniformity through Vertical Quantum Dot Columns," J. Crystal Growth 175 (pt.2), pp. 707-712, May 1997.

  326. A. R. Massengale, T. Ueda, J. S. Harris, Jr., C. Y. Tai, M. D. Deal, J. D. Plummer and R. Fernandez, "Localised Impurity Induced Layer Disordering for Lithographic Control of the Lateral Oxidation of AlAs," Electronics Letters, 33 (12), pp. 1087-1089, June 1997.

  327. K. L. Vodopyanov, V. Chazapis, C. C. Phillips, B. Sung and J. S. Harris, Jr., "Intersubband Absorption Saturation Study of Narrow III-V Multiple Quantum Wells in the l = 2.8-9 mm Spectral Range," Semicond. Sci. Technol. 12, pp. 708-714, June 1997.

  328. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Low Threshold Continuously Tunable Vertical Cavity Surface Emitting Lasers with 19.1nm Wavelength Range," Appl. Phys. Lett. 70, pp. 547-549, 1997.

  329. W. Wu, G. S. Solomon, J. S. Harris, Jr., and J. R. Tucker, "Atom-resolved Scanning Tunneling Microscopy of Vertically Ordered InAs Quantum Dots," Appl. Phys. Lett., 71, pp. 1083-1085, Aug. 1997.

  330. Lee, M. Yuri, T. Ueda, J. S. Harris, Jr., and K. Sin, "Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy," J. Electronic Materials 26 (8), pp. 898-902, Aug.1997.

  331. F. Sugihwo, M. C. Larson and J. S. Harris, Jr.,"Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure," Electro. Lett. 33 (4), pp. 1467-8, Aug.1997.

  332. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "30nm Wavelength Tunable Vertical Cavity Lasers," Proc. International Solid State Devices and Materials Conf., Hamamatsu, Japan, pp. 174, Sept. 1997.

  333. K. Matsumoto, Y. Gotoh, J-I Shirakashi, T. Maeda and J. S. Harris, Jr., "Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process," 1997 International Electron Devices Meeting, Washington, DC, pp. 155-157, Dec. 1997.

  334. C. M. Marcus, S. R. Patel, S. M. Cronenwett, D. R. Stewart, A. G. Huibers, J. S. Harris, Jr., K. Campman and A. C. Gossard, "Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory," Proc. Twelfth International Conf. on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, pp. 261, Sept. 1997.

  335. D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I Duruvz and J. S. Harris, Jr., "Correlations between Ground and Excited State Spectra of a Quantum Dot," Proc. Twelfth International Conf. on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, pp. 783, Sept. 1997.

  336. K. L. McCormick, M. Woodside, M. Huang, P. L. McEuen, C. I. Duruvz and J. S. Harris, Jr., "Scanned Potential Microscopy of a Two-dimensional Electron Gas," Proc. Twelfth International Conf. on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, pp. 141, Sept. 1997.

  337. F. Sugihwo, C-C. Lin, M. C. Larson and J. S. Harris, Jr., "Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers," 44th. American Vacuum Society National Symposium, San Jose, CA, 1997.

  338. W. A. Martin, B. A. Paldus, P. Zalicki, E. H. Wahl, T. G. Owano, J. S. Harris, Jr., C. H. Kruger and R. N. Zare "Cavity Ring-down Spectroscopy with Fourier-transform-limited Light Pulses," Chem. Phys. Lett., 258 (1-2), pp. 63-70

  339. F. Sugihwo, M. C. Larson and J. S. Harris, Jr.,"Monolithically Micromachined Wavelength Tunable Vertical Cavity Lasers," Proc. of SOTAPOCS XXVII, Paris, France, 1997.

  340. F. Sugihwo, M. C. Larson and J. S. Harris, Jr.,"Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure," Electro. Lett. 33 (4), pp. 1467-8, Aug.1997.

  341. C-C. Lin, F. Sugihwo and J. S. Harris, Jr., "Laser Parameter Extraction for Tunable Vertical Cavity Lasers," Electr. Lett., 33 (20), pp. 1705-1707, Sept. 1997.

  342. B. A. Paldus, J. S. Harris, Jr., J. Martin, J. Xie and R. N. Zare, "Cavity Ring-Down Spectroscopy Using a Frequency-Stabilized Laser Diode," J. Appl. Phys, Oct. 1997.

  343. B. A. Paldus, J. S. Harris, Jr., J. Martin, J. Xie and R. N. Zare, "Laser Diode Cavity Ring-Down Spectroscopy Using Acousto-Optic Modulator Stabilization," J. Appl. Phys., 82 (7), pp. 3199-3204, Oct. 1997.

  344. M. D. Levenson, B. A. Paldus, T. G. Spence, C. C. Harb, J. S. Harris, Jr. and R. N. Zare, "Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy," Chemphys Lett. Dec. 1997.

  345. D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I. Duruoz and J. S. Harris Jr, "Correlations Between Ground and Excited State Spectra of a Quantum Dot," Science, 278 pp. 1784, Dec. 1997.

  346. G. S. Solomon and J. S. Harris, Jr., "Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays," Proc. Third International Meeting on Quantum Functional Devices, Gaithersburg, MD, pp. 273, Nov. 1997.

  347. L. M. Franca-Neto, E. Mao and J. S. Harris, Jr., "Low Noise FET Design for Wireless Communications," 1997 International Electron Devices Meeting, Washington, DC, pp. 305-308, Dec. 1997.

  348. K. Matsumoto, Y. Gotoh, J-I Shirakashi, T. Maeda and J. S. Harris, Jr., "Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process," 1997 International Electron Devices Meeting, Washington, DC, pp. 155-157, Dec. 1997.

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  349. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers," Appl. Phys. Lett. 72 (1), pp. 10-12, Jan. 1998.

  350. T. F. Huang, T. Ueda, S. G. Spruytte and J. S. Harris, Jr., "Growth and Effects of Single Crystalline ZnO Buffer Layer on GaN," Proc. of International Symposium on Compound Semiconductors, San Diego, CA 156, pp.11-14, 1998.

  351. S. A. Komarov, G. S. Solomon and J. S. Harris, Jr., "Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure," Proc. of International Symposium on Compound Semiconductors, San Diego, CA, pp. 535-538, 1998.

  352. C.-Y. Hung, J. S. Harris, Jr., A. F. Marshall and R. A. Kiehl, "Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications," Proc. of International Symposium on Compound Semiconductors, San Diego, CA, pp. 135-138, 1998.

  353. A. R. Massengale, C. Y. Tai, M. D. Deal, J. D. Plummer and J. S. Harris, Jr., "Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs," Proc. of International Symposium on Compound Semiconductors, San Diego, CA, pp. 329-332, 1998.

  354. Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo and J. S. Harris, Jr., "Atomic Force Microscope Nanoscale Lithography for Single-Electron Device Applications," Proc. of International Symposium on Compound Semiconductors, San Diego, CA, pp. 577-582, 1998.

  355. Y. C. Pao and J. S. Harris, Jr., "Two-dimensional Device Simulation for PHEMT Material and Process Control," Proc. of International Symposium on Compound Semiconductors, San Diego, CA, 156 pp. 647-650, 1998.

  356. F. Sugihwo, C-C. Lin, J. C. Bouteiller, M. C. Larson and J. S. Harris, Jr., "Micromachined Tunable Vertical-Cavity Lasers as Wavelength-Selective Tunable Photodetectors," Proc. of International Symposium on Compound Semiconductors, San Diego, CA, pp. 561, 1998.

  357. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers," Appl. Phys. Lett. 72, pp. 10-12, Jan. 1998.

  358. Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo and J. S. Harris, Jr., "Nanoscale Oxidation of GaAs-based Semiconductors using Atomic Force Microscope," J. Appl. Phys. 83 (4), pp. 1844-1847, Feb. 1998.

  359. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Micromachined Widely Tunable Vertical Cavity Laser Diodes," J. of Microelectromechanical Systems, 7 (1), pp. 48-55, Mar. 1998.

  360. T. F. Huang and J. S. Harris, Jr., "Growth of Epitaxial AlxGa1-xN Films by Pulsed Laser Deposition," App. Phys. Lett. 72 (10), pp. 1158-1160, Mar. 1998.

  361. S. R. Patel, D. R. Stewart, C. M. Marcus, M. Gvkcedag, Y. Alhassid, A. D. Stone, C. I. Duruvz and J. S. Harris, Jr., "How Adding Electrons Scrambles the Electronic Spectrum of a Quantum Dot,"

  362. S. R. Patel, S. M. Cronenwett, D. R. Stewart, A. G. Huibers, C. M. Marcus, C. I. Duruvz, J. S. Harris, Jr., K. Campman and A. C. Gossard, "Statistics of Coulomb Blockade Peak Spacings," Phy. Rev. Lett. 80, 4522-4525, May 1998.

  363. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Micromachined Widely Tunable Vertical Cavity Laser Diodes," J. Microelectromechanical Systems, 7 (1,) pp. 48-55, Mar. 1998.

  364. L. M. Franca-Neto and J. S. Harris, Jr., "Low Noise Silicon RF FET Design Using Graded Doping and Stress," Proc. of Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 67, 1998.

  365. T. Takayama, T. Ueda, M. Ishida, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr., "Calculation of Unstable Mixing Region in Wurtzite InGaN," MRS Symp. Proc. 512, pp. 291-296, 1998.

  366. Lee and J. S. Harris, Jr., "Iron Nitride Mask and Reactive Ion Etching pf GaN Films," J Elec. Matls, 27 (4), pp. 185-189, Apr. 1998.

  367. L. Chuang, L. M. K. Vandersypen and J. S. Harris, Jr., "Bulk Spin Quantum Computation Toward Large-scale Quantum Computation," Dig. of Tech Papers, 98 IEEE ISSCC98, pp. 96-97, 1998.

  368. B. A. Paldus, C. C. Harb, T. G. Spence, B. Wilke, J. Xie, J. S. Harris, Jr. and R. N. Zare, "Cavity-Locked Ring-Down Spectroscopy," J. Appl. Phys. 83 (8), pp. 3991-3997, Apr., 1998.

  369. S. R. Patel, S. M. Cronenwett, D. R. Stewart, A. G. Huibers, C. M. Marcus, C. I. Duruvz, J. S. Harris, Jr., K. Campman and A. C. Gossard, "Statistics of Coulomb Blockade Peak Spacings," Phy. Rev. Lett. 80, 4522-4525, May 1998.

  370. T. Ueda, T-F. Huang, S. G. Spruytte, H. Lee, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr., "Vapor Phase Epitaxy Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer," J. Crys. Growth, 187 (3-4), pp. 340-346, May 1998.

  371. Y. Okada, S. Amano, Y. Iuchi, M. Kawabe and J. S. Harris, Jr., "AlGaAs/GaAs Tunneling Diode Integrated with Nanometre-scale Oxides Patterned by Atomic Force Microscope," Electron. Lett. 34 (12), pp. 1262-1263, June 1998.

  372. Y. Okada, S. Amano, M. Kawabe and J. S. Harris, Jr., "Basic Mechanisms of an Atomic Force Microscope Tip-induced Nano-oxidation Process of GaAs," J. Appl. Phys., 83 (12), pp. 7998-8001, June 1998.

  373. K. L. McCormick, M. T. Woodside, M. Huang, P. L. McEuen, C. I. Duruoz and J. S. Harris, Jr., "Scanned Potential Microscopy of a Two-dimensional Electron Gas," Physica B, 251, pp. 79-83, June 1998.

  374. C. M. Marcus, S. R. Patel, C. I. Duruoz, J. S. Harris, Jr., K. Campman and A. C. Gossard, "Statistics of Peak Spacings and Widths in the Quantum Coulomb Blockade Regime," Physica B, 251, pp. 201-205, June 1998.

  375. M. D. Levenson, B. A. Paldus, T. G. Spence, C. C. Harb, J. S. Harris, Jr., and R. N. Zare, "Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy," Chemphys. Lett. 290, (4-6), pp. 335-340, July 1998.

  376. C. Y. Hung, J. S. Harris, Jr., A. F. Marshall and R. A. Kiehl, "Annealing Cycle Dependence of Preferential Arsenic Precipitation in AlGaAs/GaAs Layers," Appl. Phys. Lett. 73, pp. 330-332, July, 1998.

  377. G. S. Solomon, W. Wu, J. R. Tucker and J. S. Harris, Jr, "Vertical InAs Diffusion and Surface Ordering Processes in InAs Vertical Quantum Dot Columns," Physica E, 2 (1-4), pp. 709-713, July 1998.

  378. A. G. Huibers, S. R. Patel, C. M. Marcus, P. W. Brouwer, C. I. Duruvz and J. S. Harris, Jr., "Distributions of the Conductance and its Parametric Derivatives in Quantum Dots," Phy. Rev. Lett, 81 (9), pp. 1917-1920, Aug. 1998.

  379. S. M. Cronenwett, S. M. Maurer, S. R. Patel, C. M. Marcus, C. I. Duruoz and J. S. Harris, Jr., "Mesoscopic Coulomb Blockade in One-channel Quantum Dots," Phys. Rev. Lett. 81 (26), pp. 5904-5907, Dec. 1998.

  380. S. R. Patel, D. R. Stewart, C. M. Marcus, M. Gokcedag, Y. Alhassid, A. D. Stone, C. I. Duruoz and J. S. Harris, Jr., "Changing the Electronic Spectrum of a Quantum Dot by Adding Electrons," Phys. Rev. Lett. 81 (26), pp. 5900-5903, Dec 1998.

  381. F. Sugihwo, C-C. Lin, L. A. Eyres, M. M. Fejer and J. S. Harris, Jr., "Broadly-tunable Narrow-linewidth Micromachined Laser/photodetector and Phototransistor," IEEE IEDM Technical Digest, San Francisco, CA, pp. 665, Dec. 1998.

  382. K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata and J. S. Harris, Jr., "Room Temperature Coulomb Oscillation and Memory Effect for Single Electron Memory made by Pulse-Mode AFM Nano-oxidation Process," IEDM, San Francisco, CA, Dec. 1998.

  383. F. Sugihwo, C-C. Lin, J. C. Bouteiller, M. C. Larson and J. S. Harris, Jr., "Micromachined Tunable Vertical Cavity Lasers as Wavelength Welective Tunable Photodetectors," Institute of Physics Conference Series, 156 pp. 561-564, 1998.

  384. Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo and J. S. Harris, Jr., "Atomic Force Microscope Nanoscale Lithography for Single-electron Device Applications," Institute of Physics Conference Series, 156, pp. 577-580, 1998.

  385. S. A. Komarov, G. S. Solomon and J. S. Harris, Jr., "Increased Surface Ordering of InAs Island Arrays using a Multidot Column Subsurface Structure," Proc. 1997 IEEE International Symp. on Compound Semiconductors, pp. 535, 1998.

  386. L. A. Eyres, C. B. Ebert, M. M. Fejer and J. S. Harris, Jr , "MBE Growth of Laterally Antiphase-patterned GaAs Films Using Thin Ge Layers for Waveguide Mixing," Technical Digest Conference on Lasers and Electro-Optics Conference, pp. 276, May 1998.

  387. B. A. Paldus, T. G. Spence, C. C. Harb, B. Willke, M. D. Levenson, J. S. Harris, Jr. and R. N. Zare, "Advances in CW Cavity Ring-down Spectroscopy," Technical Digest International Quantum Electronics Conference, pp. 79, 1998.

  388. E. Mao, C. W. Coldren, J. S. Harris, Jr., D. Yankelevich, O. Solgaard and A. Knoesen, "In-line Fiber-optic Filter using GaAs ARROW Waveguide," Technical Digest Conference on Lasers and Electro-Optics, pp. 424, 1998.

  389. M. B. Yairi, C. W. Coldren, D. A. B. Miller and J. S. Harris, Jr., "High-speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery," Proc. SPIE 3490, 1998.

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  390. K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata and J. S. Harris, Jr., "Metal-based Room-temperature Operating Single Electron Devices using Scanning Probe Oxidation," J. J. Appl. Phys. 38 (1B), pp. 477-479, Jan. 1999.

  391. L. A. Eyres, C. B. Ebert, P. J. Tourrea, J. S. Harris, Jr. and M. M. Fejer, "Demonstration of Second Harmonic Generation in All-epitaxially Grown Orientation-patterned AlGaAs Waveguides," Proc. Conf. Advanced Solid-State Lasers, Boston MA, Feb. 1999.

  392. E. Mao, C. W. Coldren, J. S. Harris, Jr., D. R. Yankelevich, O. Solgaard and A. Knoesen, "GaAs/AlGaAs Narrow-bandwidth In-line Fiber Filter," Proc. of the SPIE, 3749, pp. 94-94, 1999.

  393. H. Liu, C. C. Lin and J. S. Harris, Jr., "Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance," Proc. of the SPIE, 3952, pp. 234-241, 1999.

  394. Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, Jr., "An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-scale Atomic Force Microscope Tip-induced Oxides," Japanese. J. Appl. Phys. Part 2-Lett., 38 (2B), pp. L160-L162, Feb. 1999.

  395. T. F. Huang, A. F. Marshall, S. G. Spruytte and J. S. Harris, Jr., "Optical and Structural Properties of Epitaxial GaN Films Grown by Pulsed Laser Deposition," J. Crystal Growth, 200 (3-4), pp. 362-367, Apr. 1999.

  396. T. Takayama, T. Ueda, M. Ishida, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr , "Calculation of Unstable Mixing Region in Wurtzite InGaN," Proc. MRS Spring Meeting, San Francisco, CA, pp. 291, April 1999.

  397. Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, Jr., "GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique," 1998 International Symp. on Compound Semiconductors (Institute of Physics Publishing), pp. 337, 1999.

  398. G. S. Solomon, S. A. Komarov and J. S. Harris, Jr., "Nearest-neighbor Spatial Ordering of Strain-induced Islands using a Subsurface Island Superlattice," J. Cryst. Grow. 202, pp. 1190-1193, May 1999.

  399. C. B. Ebert, L. A. Eyres, M. M. Fejer and J. S. Harris, Jr., "MBE Growth of Antiphase GaAs Films using GaAs/Ge/GaAs Heteroepitaxy," J. Crystal Growth, 202, pp. 187-193, May 1999.

  400. E. Mao, C. W. Coldren, J. S. Harris, Jr., D. R. Yankelevich, O. Solgaard and A. Knoesen, "GaAs AlGaAs Multiple-quantum-well In-line Fiber Intensity Modulator," Appl. Phys. Lett. 75 (3), pp. 310-312, July 1999.

  401. K. L. McCormick, M. T. Woodside, M. Huang, M. S. Wu, P. L. McEuen, C. I. Duruoz and J. S. Harris, Jr., "Scanned Potential Microscopy of Edge and Bulk Currents in the Quantum Hall Regime," Phys. Rev B 59 (7), pp. 4654-4657, 1999.

  402. J. S. Harris, Jr., C. C. Lin, W. Martin, F. Sugihwo, M. Larson and B. Paldus, "Micromachined Tunable Optoelectronic Devices for Spectroscopic Applications," OSA Conf. Trends in Optics and Photonics. Adavnced Semiconductor Lasers and their Applications 31, Santa Barbara, CA, July 1999.

  403. S. M. Maurer, S. R. Patel, C. M. Marcus, C. I. Duruoz and J. S. Harris, Jr., "Coulomb Blockade Fluctuations in Strongly Coupled Quantum Dots," Phys. Rev. Lett. 83 (7), pp. 1403-1406, Aug. 1999.

  404. M. B. Yairi, C. W. Coldren, D. A. B. Miller and J. S. Harris, Jr., "High-speed, Optically Controlled Surface-normal Optical Switch Based on Diffusive Conduction," Appl. Phys. Lett., 75 (5), pp. 597-599, Aug. 1999.

  405. C. Y. Hung, J. S. Harris, Jr., A. F. Marshall and R. A. Kiehl, "Size Stabilization of Arsenic Precipitates in Nonstoichiometric GaAs-based Compounds," Appl. Phys. Lett 75 (7), pp. 917-919, Aug. 1999.

  406. L. M. Franca-Neto and J. S. Harris, "Excess Noise in Sub-micron Silicon FET: Characterization, Prediction and Control," Proc. 29th European Solid-State Device Research Conference, Leuven, Belgium, Sept. 1999.

  407. C. W. Coldren, S. G. Spruytte, J. S. Harris, Jr. and M. C. Larson, "Group III-Nitride-Arsenide Long Wavelength Lasers Grown by Elemental Source Molecular Beam Epitaxy," Proc. LEOS'99. 12th Annual Meeting, San Francisco, CA, Nov. 1999.

  408. M. B. Yairi, H. V. Demir, C. W. Coldren, D. A. B. Miller and J. S. Harris, Jr. "Optically-Controlled Optical Gate Using a Double Diode Structure," Proc. LEOS, pp. 770-771, 1999.

  409. C. Y. Hung, A. F. Marshall, D.-K. Kim, W. D. Nix, J. S. Harris, Jr., and R. A. Kiehl, "Strain Directed Assembly of Nanoparticle Arrays within a Semiconductor," J. Nanoparticle Research 1, pp. 329-347, 1999.

  410. A. G. Huibers, J. A. Folk, S. R. Patel, C. M. Marcus, C. I. Duruoz and J. S. Harris, Jr., "Low-temperature Saturation of the Dephasing Time and Effects of Microwave Radiation on Open Quantum Dots," Phys. Rev. Lett. 83 (24), pp. 5090-5093, Dec. 1999.

  411. S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, Jr., "MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics," Proc. Mat. Res. Soc. Symp. GaN and related alloys 595, pp. W8.4.1-W8.4.5, 1999.

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  412. K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata and J. S. Harris, Jr., "Room-temperature Single-electron Memory Made by Pulse-mode Atomic Force Microscopy Nano Oxidation Process on Atomically Flat Alpha-alumina Substrate," Appl. Phys. Lett. 76 (2), pp. 239-241, Jan. 2000.

  413. H. Liu, C-C. Lin and J. S. Harris, Jr., "Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance," Proc. Photonics West 2000, San Jose, CA, Jan. 2000.

  414. E. Mao, D. R. Yankelevich, C. W. Coldren, O. Solgaard, A. Knoesen and J. S. Harris, Jr., "A Multiple-Quantum-Well GaAs/AlGaAs In-Line Fiber Intensity Modulator," Proc. SPIE 3936, pp. 50-57, 2000.

  415. C-C. Lin, W. A. Martin, J. S. Harris, Jr., and F. Sugihwo, "Optical Gain and Collector Current Characteristics of Resonant-cavity Phototransistors," Appl. Phys. Lett. 76 (9), 1188-1190, Feb. 2000.

  416. L. A. Eyres, P. J. Thourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, B. Gerard and E. Lallier, "Quasi-phasematched Frequency Conversion in Thick All-epitaxial, Orientation-Patterned GaAs films," Proc. Topical Meeting on Advanced Solid-State Laser (ASSL 2000), Davos, Switzwerland, Feb. 2000.

  417. G. Arft, D. R. Yankelevich, A. Knoesen, E. Mao and J. S. Harris, Jr., "In-line Fiber Evanescent Field Electrooptic Modulators," J. Nonlinear Optical Phys. & Materials, 9 (1), pp. 79-94, Mar. 2000.

  418. E. Mao, D. R. Yankelevich, C-C. Lin, O. Solgaard, A. Knoesen and J. S. Harris, Jr., "Wavelength-selective Semiconductor In-line Fibre Photodetectors," Electron. Lett. 36 (6), pp. 515-516, Mar. 2000.

  419. S. G. Spruytte, C. W. Coldren, A. F. Marshall and J. S. Harris, Jr. "Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys," Proc. MRS Spring 2000 Meeting, San Francisco, Apr. 2000.

  420. Y. Gotoh, K. Matsumoto, V. Bubanja, F. Vazquez, T. Maeda and J. S. Harris, Jr., "Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process," J. J. Appl. Phys. 39, pp. 2334-2337, Apr. 2000.

  421. C. W. Coldren, M. C. Larson, S. G. Spruytte and J. S. Harris, Jr., "1200nm GaAs-based Vertical Cavity Lasers Employing GaInNAs Multiquantum Well Active Regions," Electron. Lett. 36 (11), pp. 951-952, May 2000.

  422. C. W. Coldren, M. C. Larson, S. G. Spruytte, H. E. Garrett and J. S. Harris, Jr. "Pulsed 25-108 degrees C operation of GaInNAs Multiple Quantum Well Vertical Cavity Lasers," Tech. Digest CLEO 2000, TOPS 39, San Francisco, CA, May 2000.

  423. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, Jr. M. M. Fejer, B. Gerard, K. Becouarn and E. Lallier, "Thick (200mu m) Orientation-Patterned GaAs for Bulk Quasi-phase-Matched Nonlinear Frequency Conversion," Tech. Digest CLEO 2000, TOPS 39, San Francisco, CA, May 2000.

  424. H. L. Kung, D. A. B. Miller, P. Atanackovic, C-C. Lin, J. S. Harris, Jr., L. Carraresi, J. E. Cunningham and W. Y. Jan, "Wavelength Monitor Based on Two Single-quantum-well Absorbers Sampling a Standing Wave Pattern," Appl. Phys. Lett. 76 (22), pp. 3185-3187, May 2000.

  425. C. W. Coldren, S. G. Spruytte, J. S. Harris, Jr., and M. C. Larson, "Group III Nitride-Arsenide Long Wavelength Lasers Grown by Elemental Source Molecular Beam Epitaxy," J. Vac. Sci. Technol. B 18 (3), pp. 1480-1483, May-June 2000.

  426. S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, Jr. "MBE Growth of Nitride-Arsenide Materials for Long Wavelength Opto-Electronics," MRS INTERNET J. Nitride Semiconductor Res. 5 (S1), pp. U407-U412, 2000.

  427. W. A. Martin, C. C. Lin, F. Sugihwo and J. S. Harris, Jr., "Frequency Locking of Micromachined Tunable VCSELs to External Wavelength Selective Filters," Digest LEOS Summber Topical Meeting Optical Sensing in Semiconductor Manufactureing, Aventura, FL, July 2000.

  428. Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, Jr., "Basic Properties of GaAs Oxide Generated by Scanning Probe Microscope Tip-induced Nano-oxidation Process," J. Appl. Phys. 88 (2), pp. 1136-1140, July 2000.

  429. T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr., "Theoretical Analysis of Unstable Two-phase Region and Microscopic Structure in Wurtzite and Zinc-blende InGaN using Modified Valence Force Field Model," J. Appl. Phys. 88 (2), pp. 1104-1110, July 2000.

  430. Y. Gotoh, K. Matsumoto, T. Maeda, E. B. Cooper, S. R. Manalis, H. Fang, S. C. Minne, T. Hunt, H. Dai, J. S. Harris, Jr., and C. F. Quate, "Experimental and Theoretical Results of Room-temperature Single-electron Transistor Formed by the Atomic Force Microscope Nano-oxidation Process," J. Vac. Sci. Technol. B 18 (4), pp. 1321-1325, Jul-Aug. 2000.

  431. E. Mao, D. R. Yankelevich, C-C. Lin, O. Solgaard, A. Knoesen and J. S.Harris, Jr. "Narrow-band Light Emission in Semiconductor-fibre Asymmetric Waveguide Coupler," Electronics Letters 36 (16), pp. 1378-1379, Aug. 2000.

  432. M. B. Yairi, H. V. Demir, C. W. Coldren, J. S. Harris, Jr. and D. A. B. Miller, "Demonstration of an Optoelectronic Dual-diode Optically Controlled Optical Gate with a 20 Picosecond Repetition Period," Tech. Digest Conf. Nonlinear Optics: Materials, Fundamentals, and Applications. TOPS 46, Kaua'I-Lihue, HI, Aug. 2000.

  433. C. C. Lin, W. A. Martin, J. S. Harris, Jr., and E. Chan, "Modeling of MEMS Tunable Optoelectronic Device Mirror," Tech Digest 2000 IEEE/LEOS International Conference on Optical MEMS, Kauai, HI, Aug. 2000.

  434. J. S. Harris, Jr., C-C. Lin, W. A. Martin, F. Sugihwo, M. C. Larson and B. A. Paldus. "Micromachined Tunable Optoelectronic Devices for Spectroscopic Applications," OSA TOPS, 31, pp. 130-134, 2000.

  435. T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr. "Analysis of Unstable Two-Phose Region in Wurtzite Group III Nitride Ternary Alloy Using Modified Valence Force Field Model," Jpn. J. Appl. Phys. 39, pp. 5057-5062, Part 1, No. 9A, Sept. 2000.

  436. P. Krispin, S. G. Spruytte, J. S. Harris, Jr., and K. H. Ploog, "Electrical Depth Profile of p-type GaAs/Ga(As, N)/GaAs Heterostructures Determined by Capacitance-voltage Measurements," J. Appl. Phys. 88 (7), pp. 4153-4158, Oct. 2000.

  437. B. E. Nelson, M. Gerken, D. A. B. Miller, R. Piestun, C-C. Lin and J. S. Harris, Jr., "Use of a Dielectric Stack as a One-dimensional Photonic Crystal for Wavelength Demultiplexing by Beam Shifting," Optics Letters 25 (20), Oct. 2000.

  438. B. E. Nelson, M. Gerken, D. A. B. Miller, R. Piestun, C-C. Lin and J. S. Harris, Jr., "Wavelength Demultiplexing by Beam Shifting Using a Dielectric Stack as a One-Dimensional Photonic Crystal," Proc of LEOS, pp. 482-483, 2000.

  439. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, Jr., M. M. Fejer, B. Gerard, L. Becouarn and E. Lallier, "All-epitaxial Orientation-patterned GaAs for Nonlinear Optical Frequency Conversion," Proc. of LEOS, pp. 312-313, 2000.

  440. M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris, Jr., "Low Threshold Current Continuous-Wave GaInNAs/GaAs VCSELs," Proc. of IEEE, 2000.

  441. M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris, Jr., "Low Threshold Oxide-confined GaInNAs Long Wavelength Vertical Cavity Lasers," IEEE Photon. Technol. Lett. 12 (12), pp 1598-1600, Dec. 2000.

  442. J. S. Harris, Jr. "Tunable Long Wavelength Vertical Cavity Lasers: the Engine of Next Generation Optical Networks?" IEEE/LEOS Millenium Issue, IEEE J. Special Topics in Quantum Electronics Nov./Dec. 2000.

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  443. T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal and J. S. Harris, Jr. "Ti-catalyzed Si Nanowires by Chemical Vapor Deposition: Microscopy and Growth Mechanisms," Journal of Applied Physics 89 (2), Jan. 2001.

  444. T. Takayama, M. Yuri, K. Itoh, T. Baba and J.S. Harris, Jr. "Analysis of Phase-Separation Region in Wurtzite Group III Nitride Quaternary Material System using Modified Valence Force Field Model," J. Crystal Growth 222 (1-2), pp. 29-37, Jan. 2001.

  445. J. A. Folk, S. R. Patel, K. M. Birnbaum, C. M. Marcus, C. I. Duruoz and J. S. Harris, Jr., "Spin Degeneracy and Conductance Fluctuations in Open Quantum Dots," Phys. Rev. Lett., 86 (10), pp. 2102-2105, March 2001.

  446. S. G. Spruytte, C. W. Coldren, J. S. Harris, Jr., D. Pantelidis, H-J. Lee, J. C. Bravman and M. Kelly, "Use of Angle Resolved X-Ray Photoelectron Spectroscopy for Determination of Depth and Thickness of the Different Layers in a Layer Structure," J. Vac. Science and Technol. A 19 (2), Mar/Apr. 2001.

  447. S. G. Spruytte, W. Wampler, P. Krispin, C. W. Coldren, M. C. Larson, K. H. Ploog and J. S. Harris, Jr., "Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal," J. Appl. Phys. 89 (8), pp. 4401-4406, April 2001.

  448. T. J. Pinguet, O. Levi, T. Skauli, L. A. Eyres, L. Scacabarozzi, M. M. Fejer, J. S. Harris, Jr., T. J. Kulf, S. Brisson, B. Gerard, L. Becauarn and E. LaIlier, "Characterization of 0.5mm thick Films of Orientation-Patterned GaAs for Nonlinear Optical Application," CLEO '01, pp. 138-138, May 2001.

  449. O. Levi, T. J. Pinguet, T. Skauli, L. A. Eyres, L. Scaccabarozzi, M. M. Fejer, J. S. Harris, Jr., T. J. Kulp, S. Bisso, B. Gerard, L. Becouarn and E. Lallier, "Mid-Infrared Generation by Difference-Frequency Mixing in Orientation-Patterend GaAs," CLEO '01, pp. 675-676, May 2001.

  450. C.-C. Lin, W. A. Martin and J. S. Harris, Jr., "Opto-Mechanical Model of Surface Micromachined Tunable Optoelectronic Devices," CLEO '01, pp. 154-155, May 2001.

  451. R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller and J. S. Harris, Jr., "High-speed Sample and Hold Using Low Temperature Grown GaAs MSM Switches for Photonic A/D Conversion," CLEO '01, pp. 66-67, May 2001.

  452. P. Krispin, S. G. Spruytte, J. S. Harris, Jr. and K. H. Ploog, "Origin and Annealing of Deep-Level Defects in p-type GaAs/Ga(As, N)/GaAs Heterostructures Grown by Molecular Beam Epitaxy," J. Appl. Phys., 89 (11), pp. 6294-6301, June 2001.

  453. S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Petersen and J. S. Harris, Jr., "Nitrogen Incorporation in Group III-Nitride Arsenide Materials Grown by Elemental Source MBE," J. Crystal Growth 227, pp. 506-515, July 2001.

  454. H. Liu, C. C. Lin and J. S. Harris, Jr., "High-speed, Dual-function Vertical Cavity Multiple Quantum Well Modulators and Photodetectors for Optical Interconnects," Optical Engr., 40 (7), pp. 1186-1191, July 2001.

  455. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength VCSELs," LEOS Summer Topical Meetings, July 2001.

  456. R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller and J. S. Harris, Jr., "Ultrafast Differential Sample and Hold using Low-Temperature-Grown GaAs MSM for Photonic A/D Conversion," IEEE Photon. Technol. Lett. 13 (7), pp. 717-719, July 2001.

  457. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard and E. Laillier, "All-epitaxial Fabrication of Thick, Orientation-Patterned GaAs Films for Nonlinear Optical Frequency Conversion," Appl. Phys. Lett. 76 (7), pp. 904-906, Aug. 2001.

  458. P. Krispin, S. G. Spruytte, J. S. Harris, Jr. and K. H. Ploog, "Admitance Dispersion of n-type GaAs/Ga(As,N)/GaAs Heterostructures Grown by Molecular Beam Epitaxy," J. Appl. Phys., 90 (5), pp. 2405-2410 Sept. 2001.

  459. T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr., "Theoretical Predictions of Unstable Two-phase Regions in Wurtzite Group-III-Nitride-Based Ternary and Quaternary Material Systems using Modified Valence Force Field Model," J. Appl. Phys. 90 (5), pp. 2358-2369, Sept. 2001.

  460. S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren and J. S. Harris, Jr., "Molecular Beam Epitaxy Growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," Proc. 27th International Symposium on Compound Semiconductors, Monterey, CA, Sept. 2001. (to be published)

  461. M. C. Larson, C.W. Coldren, S. G. Spruytte, H. E. Peterson, H. E. Garrett and J. S. Harris, Jr., "GaInNAs Long Wavelength Vertical Cavity Lasers," CLEO/Pacific Rim 2001, 2, pp. 594-595, 2001.

  462. S. G. Spruytte, M. C. Larson, C. W. Coldren, V. A. Sabnis and J. S. Harris, Jr. "MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-electronics," to be published J. Vac. Sci. Technol. B

  463. S. G. Spruytte, M. C. Larson, M. Wistey, C. W. Coldren, S. Bond and J. S. Harris, Jr. "Long Wavelength GaInNAs QW / GaNAs Barrier Broad Area Lasers," IEEE J. Quantum Electron. (to be published)

  464. T. J. Pinguet, L. Scaccabarozzi, O. Levi, T. Skauli, L. A. Eyres, M. M. Fejer and J. S. Harris, Jr., "Second Harmonic Generation in Orientation-Patterned AlGaAs Waveguides Pumped at 1.55 /spl mu/m," LEOS, pp. 376-377, Nov. 2001.

  465. C.-C. Lin, J. Fu and J. S. Harris, Jr., "Widely Tunable Micromachined Optical Filter with Adjustable Tuning Chracteristics," LEOS, pp. 298-299, Nov. 2001.

  466. V. A. Sabnis, H. V. Demir, M. Yairi, D. A. B. Miller and J. S. Harris, Jr., "Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface-Normal Illuminated Waveguide," LEOS, pp. 362-363, Nov. 2001.

  467. J. A. Folk, C. M. Marcus and J. S. Harris, Jr., "Decoherence in Nearly Isolated Quantum Dots," Phys. Rev. Lett. 87, Nov. 2001.

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  468. C-C. Lin, W. A. Martin and J. S. Harris, Jr. "Optomechanical Model of Surface Micromachined Tunable Optoelectronic Devices," IEEE J. on Selected Topics in Quantum Electronics, 8 (1), pp. 80-87, Jan.-Feb. 2002.

  469. H. L. Kung, S. R. Bhalotra, J. D. Mansell, D. A. B. Miller and J. S. Harris, Jr., "Standing-wave Transform Spectrometer Based on Integrated MEMS Mirror and Thin-Film Photodetector," IEEE J. on Selected Topics in Quantum Electronics, 8 (1), pp. 98-105, Jan/Feb. 2002.

  470. P. Krispin, S. G. Spruytte, J. S. Harris, Jr., and K. H. Ploog, "Electron Traps in Ga(As,N) Layers Grown by Molecular-Beam Epitaxy," App. Phys. Lett. 80 (12), pp. 2120-2122, March 2002.

  471. W. Ha, V. Gambin, M. Wistey, S. Bank, H. Yuen, S. Kim and J. S. Harris, Jr., "Long Wavelength GaInNAsSb/GaNAsSb multiple Quantum Well Lasers," Electronic Letters, 38 (6), pp. 277-278, March 2002.

  472. T. Skauli, K. L. Vodopyanov, T. J. Pinguet, A. Schober, O. Levi, L. A. Eyres, M. M. Fejer, J. S. Harris, B. Gerard, L. Becouarn, E. Lallier, and G. Arisholm, "Measurement of the Nonlinear Coefficient of Orientation-Patterned GaAs and Demonstration of Highly Efficient Second-Harmonic Generation," Optics Letters, 27 (8), pp. 628-630, April 2002.

  473. W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim and J. S. Harris, Jr., "Multiple-Quantum-Well GaInNAs-GaNAs Ridge-Waveguide Laser Diodes Operating out to 1.4 /spl mu/m," IEEE Photonics Tech. Letters, 14 (5), May 2002.

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